Xiamen San'an Optoelectronics Co., Ltd

Bingyang Chen

Menghsin Yeh

Zhousheng Jiang

Chungying Chang

An LED chip and a display device are disclosed in the disclosure. The LED chip structure includes a semiconductor stack layer. The semiconductor stack layer includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer. The active layer is disposed above the P-type semiconductor layer. The active layer includes multiple layers formed by repeatedly stacking a well layer and a quantum barrier layer. The P-type semiconductor layer is disposed above the active layer. The N-type peak doping concentration of at least two quantum barrier layers of the active layer is no greater than 4E17 atoms/cm.

Growing community of inventors

Fujian, China

Bingyang Chen