Huawei Technologies Co., Limited

Bingwu Ji

Tanfu Zhao

Yunming Zhou

Sijie Chi

Wei Bin Lin

Cong Yao

Mei Li

Xingyi Wang

Yu Xia

Zhiyan Li

Youming Tsao

Yunpeng Wang

Min Fan

Chuhua Hu

Jiahua Lin

This application provides a memory, a chip, and a method for storing repair information of the memory. The memory includes a repair circuit that is configured to receive a first signal from a processor and determine to be powered by a first power supply or a second power supply based on a status of the first signal, to store repair information. The repair information is information of the failed bit cells in the memory. The first power supply is zero or in a high impedance state when a system is powered off, and the second power supply is not zero when the system is powered off. The memory further comprises a processing circuit configured to perform communication between the memory and the processor based on the repair information. Therefore, the repair information of the memory can be stored even during power loss.

Memory, chip, and method for storing repair information of memory

A chip includes a processor, a memory, and a storage controller of the memory. There is an access path between the processor and the storage controller, and the processor reads data from or writes data into the memory by using the storage controller through the access path. The chip further includes a shielding circuit. The shielding circuit is configured to shield a signal on the access path when the processor is powered off.

Noise shielding circuit and chip

A storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first MOS transistor. A gate of the first MOS transistor is connected to the first storage bit, a source of the first MOS transistor is connected to a first read line, and a drain of the first MOS transistor is connected to a second read line. In a first state, the first read line is a read word line, and the second read line is a read bit line; or in a second state, the second read line is a read word line, and the first read line is a read bit line.

Storage unit and static random access memory

A memory and a signal processing method are provided. The memory includes a latch circuit, a decoding circuit, a storage array, a read circuit, and a write circuit. The storage array includes M rows and N columns of bitcells. The latch circuit is configured to receive a first address and a second address. The decoding circuit is configured to: determine a first bitcell based on the first address, and determine a second bitcell based on the second address. The write circuit is configured to: receive data, and write the data into the first bitcell through a first port of the first bitcell. The read circuit is configured to read, through the first port of the first bitcell, data stored in the first bitcell; and is further configured to read, through a second port of the second bitcell, data stored in the second bitcell. Implementing this application can implement 1R1RW.

Memory including a 1R1RW bitcell storage array and methods thereof

A storage unit and a static random access memory (SRAM), where storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first metal-oxide-semiconductor (MOS) transistor. A gate of the first MOS transistor is coupled to the first storage bit, a source of the first MOS transistor is coupled to a first read line, and a drain of the first MOS transistor is coupled to a second read line. In a first state, the first read line is a read word line, and the second read line is a read bit line, or in a second state, the second read line is a read word line, and the first read line is a read bit line. The storage unit according to embodiments of the present invention can implement an exchange between a read word line and a read bit line.

This application discloses an electrostatic discharge protection apparatus and an integrated circuit with multiple power domains. The electrostatic discharge protection apparatus includes a diode and an NMOS transistor. A positive electrode of the diode is coupled to a first interface, a negative electrode of the diode is coupled to a first electrode of the NMOS transistor, both a second electrode of the NMOS transistor and a gate electrode of the NMOS transistor are coupled to a second interface, and a substrate of the NMOS transistor is used for grounding. At least one electrostatic discharge protection apparatus may be disposed in the integrated circuit with multiple power domains.

Electrostatic discharge protection apparatus and integrated circuit with multiple power domains

A timing processing method and a circuit for a synchronous SRAM are provided. The method includes: directly inputting an address signal to a wordline decoder for logic decoding; generating various signals by setting various devices in terms of timing; and performing sensitive amplification on data that is input by a memory cell array and is selected by a bitline, and then outputting the data, that is, generating a data output signal. The circuit for a synchronous SRAM includes: a wordline decoder, a timing generator, a wordline controller, a wordline pulse width generator, a memory cell array, and a sense amplifier.

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Shenzhen, China

Bingwu Ji