International Business Machines Corporation

Globalfoundries Inc.

Binglin Miao

Nicolas J Loubet

Zhenxing Bi

Jingyun Zhang

Sanjay C Mehta

Muthumanickam Sankarapandian

Donald Francis Canaperi

Chun Wing Yeung

Wei Lin

Spyridon Skordas

Raghuveer Reddy Patlolla

Charan V Surisetty

Troy Lawrence Graves-Abe

Thamarai Selvi Devarajan

Matthew T Shoudy

A method for forming a nanosheet semiconductor device includes forming a nanosheet stack comprising channel nanosheets. The method includes depositing silicon on the nanosheet stack, the silicon completely filling a space between adjacent channel nanosheets. The method includes etching the silicon. The method includes exposing the nanosheet stack to a gas phase heat treatment.

Silicon residue removal in nanosheet transistors

A bonding material stack for wafer-to-wafer bonding is provided. The bonding material stack may include a plurality of layers each including boron and nitrogen. In one embodiment, the plurality of layers may include: a first boron oxynitride layer for adhering to a wafer; a boron nitride layer over the first boron oxynitride layer; a second boron oxynitride layer over the boron nitride layer; and a silicon-containing boron oxynitride layer over the second boron oxynitride layer.

Wafer bonding using boron and nitrogen based bonding stack

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Loudonville, NY, United States of America

Binglin Miao