Yangtze Memory Technologies Co., Ltd.

Bingguo Wang

Zhiliang Xia

Wenxi Zhou

Zongliang Huo

Kun Zhang

Di Wang

Linchun Wu

Wei Xie

Hongbin Zhu

Lei Li

Chao Shen

Qiangmin Wei

Junzhan Liu

Hongxia Ma

Hai Song

A three-dimensional (3D) memory device includes a stack structure having interleaved conductive layers and dielectric layers, and a channel structure extending through the stack structure along a first direction. The channel structure is in contact with a source of the 3D memory device at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a first angled structure, and a first diameter of the memory film at the bottom portion below the first angled structure is smaller than a second diameter of the memory film at an upper portion above the first angled structure.

Three-dimensional memory devices and methods for forming the same

A three-dimensional (3D) memory device includes a stack structure having interleaved conductive layers and dielectric layers, and a channel structure extending through the stack structure along a first direction. The channel structure is in contact with a source of the 3D memory device at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a tunneling layer over the semiconductor channel, a storage layer over the tunneling layer, and a blocking layer over the storage layer. A first thickness of the bottom portion of the channel structure is larger than a second thickness of a top portion of the channel structure.

Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.

Methods for polysilicon characterization

Embodiments of apparatus and method for testing metal contamination are disclosed. In an example, an apparatus for testing metal contamination includes a chamber in which a test object is placed, a gas supply configured to supply nitrogen gas into the chamber, a pressure controller configured to apply a pressure of at least about 1 torr in the chamber, and a measurement unit configured to measure a concentration of a metal from the test object.

Metal contamination test apparatus and method

Growing community of inventors

Wuhan, China

Bingguo Wang