Luxtera, Inc.

Irm LLC

Other

Yotta Networks, Inc.

Novartis Ag

Microbiotix, Inc.

Yt Networks Capital, LLC

Bing Li

Lawrence Cary Gunn, Iii

Thierry J Pinguet

Maxime Jean Rattier

Guo Li

Roger Koumans

Nathanael Schiander Gray

Yi Liu

Tetsuo Uno

Qiang Ding

Lakshman S Tamil

David F Wolf

Guobao Zhang

Taebo Sim

Pingda Ren

Xia Wang

Shuli You

Scott A Rothrock

James Plesa

Hyun Soo Lee

Lintong Li

Mitch Entezari

David Press

Pascal Furet

Norton P Peet

Paul William Manley

Guido Bold

Marc Lang

Giorgio Caravatti

Vito Guagnano

Werner Breitenstein

Frederick Rush

Joseph Schoepfer

Terry L Bowlin

Carsten Spanka

Lee Dobson McFearin

Carole Pissot Soldermann

Arnab Basu

John D Williams

Gopalakrishnan Hari

Debra M Mills

Alexander A Smith

Justin Hunt

Earl Ponceti

Glen Collier

David L R Press

Joseph M McQuade

Quan Jiang

Allesandro Fabbri

Guo Liang Li

Lawrence C Iii Gunn

The present invention is related to the development of compounds and methods for inhibiting viral infection in a mammal. A pseudotype virus was developed for use in a high throughput assay for identifying nonpeptidic small molecule inhibitors that prevent viral entry into a host cell.

Inhibitors of viral entry into mammalian cells

The invention relates to compounds of formula (I) wherein the substituents X, R, R, Rand Rhave the meaning as set forth and explained in the description of the invention, to processes for the preparation of these compounds, pharmaceutical compositions containing same, the use thereof optionally in combination with one or more other pharmaceutically active compounds for the therapy of a disease which responds to an inhibition of protein kinase activity, and a method for the treatment of such a disease.

Compounds and compositions as protein kinase inhibitors

Systems and methods for determining a slicing level which is used as a threshold to determine whether timeslots of an incoming data signal contain ones or zeros. The method of one embodiment comprises receiving a data signal, identifying a maximum level of the data signal, identifying a minimum level of the data signal, determining an average of the minimum and maximum levels, and then using the average of the minimum and maximum levels as a slicing level to identify bits of a data packet embodied in the data signal.

System and method for fast dynamic adjustment of slicing level for burst mode optical receivers

The invention provides a novel class of compounds, pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with abnormal or deregulated kinase activity, particularly diseases or disorders that involve abnormal activation of the Abl, BCR-Abl, Bmx, c-Raf, Csk, Fes, FGFR, Flt3, Ikk, IR, JNK, Lck, Mkk, PKC, PKD, Rsk, SAPK, Syk, Trk, BTK, Src, EGFR, IGF, Mek, Ros and Tie2 kinases.

Systems and methods for aligning the phase of a PLL with an incoming data signal. In one embodiment, when a data signal is received in a PLL, a phase perturbation signal is generated and injected into the PLL. The PLL then performs a phase alignment procedure to lock on to the received data signal. The phase perturbation signal is a damped sinusoidal oscillation that is injected into the PLL when each of a plurality of data packets is received. The perturbation signal has an amplitude sufficient to bump the PLL out of a quasi-stable state around 180 degrees out of phase with the incoming data signal, but is damped to less than a degree of phase shift within 30 ns of being injected.

Fast clock acquisition enable method using phase stir injection to PLL for burst mode optical receivers

The invention provides a novel class of compounds, pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with abnormal or deregulated kinase activity, particularly diseases or disorders that involve abnormal activation of the Abl, BCR-Abl, Bmx, CSK, TrkB, FGFR3, Fes, Lck, B-RAF, C-RAF, MKK6, SAPK2&#x3b1; and SAPK2&#x3b2; kinases.

Embodiments of the present invention provide a system and method for routing optical data. In one embodiment of the present invention, data can routed in a non-blocking fashion from a plurality of the ingress edge units to a plurality of egress edge units by selectively connecting the ingress edge units to the egress edge units at a photonic core. Switching at the photonic core can be driven by a clock signal and does not require an electrical to optical conversion to occur at the core. This can allow switching on the nanosecond level, substantially faster than many prior art systems.

System and method of routing data at a photonic core

Systems and methods for optical cross connects which switch data at a container (packet) level. In one embodiment, a plurality of optical switch edges are coupled to an optical switch core via a minimal number of optical fibers. The switch core is configured to optically switch data from an ingress edge to one of a plurality of egress edges in a nonblocking fashion. The ingress edge receives data streams and distributes the data among a plurality of container processors. Each of these container processors produces an optical signal of a different wavelength, which can then be multiplexed with others to form a multiple-wavelength optical signal that is transmitted to the switch core. The switch core then switches successive portions (containers) of the multiple-wavelength signal to the egress edges to which they are respectively destined. The respective egress edges perform the reverse of this process to form output data signals.

Container based crossconnect

High speed optical modulators can be made of a lateral PN diode formed in a silicon optical rib waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

Doping profiles in PN diode optical modulators

A standard CMOS process is used to fabricate optical, optoelectronic and electronic devices at the same time on a monolithic integrated circuit. FIG.shows an active waveguide formed by a standard CMOS process on a five layer substrate. The waveguide is a silicon strip loaded waveguide with a three layer core made of a silicon strip on a silicon slab with a silicon dioxide layer between the strip and slab. The active waveguide has two doped regions in the silicon slab adjacent to and on either side of the waveguide. FIG.A is a table summarizing the elements of the waveguide of FIG.and the CMOS transistors of FIGS.and, which are formed from the same materials at the same time on the same silicon substrate. In a standard CMOS process, a layer of metallic salicide can be deposited on those selected portions of an integrated circuit, where it is desired to have metallic contacts for electronic components, such as transistors. The deposition of a salicide into optical elements such as the core of an optical waveguide or a light scatterer will damage the elements and prevent the passage of light through those sections of the elements. Prior to the deposition of the salicide, a salicide blocking layer is deposited on those parts of an integrated circuit, such as on an optical waveguide or a light scatterer, which are to be protected from damage by the deposition of salicide. The salicide blocking layer is used as one layer of the cladding of a silicon waveguide and a light scatterer.

CMOS process active waveguides on five layer substrates

High speed optical modulators can be made of a lateral PN diode formed in a strip loaded optical waveguide on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Due to differences in fabrication methods, forming strip loaded waveguides with consistent properties for use in PN diode optical modulators is much easier than fabricating similar rib waveguides.

PN diode optical modulators fabricated in strip loaded waveguides

High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

PN diode optical modulators fabricated in rib waveguides

High speed optical modulators can be made of a lateral PN diode formed in a silicon optical waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

In a standard CMOS process, a layer of metallic salicide can be deposited on those selected portions of an integrated circuit, where it is desired to have metallic contacts for electronic components, such as transistors. The deposition of a salicide into optical elements such as the core of an optical waveguide or a light scatterer will damage the elements and prevent the passage of light through those sections of the elements. Prior to the deposition of the salicide, a salicide blocking layer is deposited on those parts of an integrated circuit, such as on an optical waveguide or a light scatterer, which are to be protected from damage by the deposition of salicide. The salicide blocking layer is used as one layer of the cladding of a silicon waveguide and a light scatterer.

CMOS process active waveguides

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San Diego, CA, United States of America

Bing Li