Air Products and Chemicals, Inc.

Bing Ji

Eugene Joseph Karwacki, Jr

Dingjun Wu

Stephen Andrew Motika

Robert Gordon Ridgeway

Peter James Maroulis

Mark Leonard O'Neill

Timothy Christopher Golden

Raymond Nicholas Vrtis

Ronald Martin Pearlstein

David A Roberts

Howard P Withers, Jr

Philip Bruce Henderson

Andrew David Johnson

Aaron Scott Lukas

Thomas Stephen Farris

John Giles Langan

Hoshang Subawalla

Steven Arthur Rogers

Martin Jay Plishka

Peter Richard Badowski

A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.

Method for removing carbon-containing residues from a substrate

A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Removal of transition metal ternary and/or quaternary barrier materials from a substrate

A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

A first aspect of a process of recovering xenon from feed gas includes: providing an adsorption vessel containing adsorbent having a Xe/Nselectivity ratio &#x3c;75; feeding into the adsorption vessel feed gas having an initial nitrogen concentration &#x3e;50% and an initial xenon concentration &#x2267;0.5%; evacuating the adsorption vessel; and purging the adsorption vessel at a purge-to-feed ratio &#x2267;10. The final xenon concentration is &#x2267;15&#xd7; the initial xenon concentration. A second aspect of the process includes providing an adsorption vessel containing adsorbent having a Xe Henry's law Constant &#x2267;50 mmole/g/atm; feeding into the adsorption vessel feed gas having an initial nitrogen concentration &#x3e;50% and an initial xenon concentration &#x2267;0.5%; heating and purging the adsorption vessel to recover xenon having a final concentration &#x2267;15&#xd7; its initial concentration. Apparatus for performing the process are also described.

Xenon recovery system

A process for the selective removal of a TiO-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO-containing substance from an article comprising: providing the article having the TiO-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.

Method for removing titanium dioxide deposits from a reactor

This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

Method to protect internal components of semiconductor processing equipment using layered superlattice materials

A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.

Method for cleaning deposition chambers for high dielectric constant materials

An on-line halogen analyzer system and method of use for semiconductor processing effluent monitoring. The system includes sampling the effluent stream into an absorption cell, and passing UV-Visible light through the effluent sample in the cell. After passing through the sample the light is collected by a photo detector for real-time wavelength-selective absorption analysis. The system provides simultaneous determination of the concentrations of multiple halogen gases (e.g. F , Cl , Br , and I ) in semiconductor processing effluent streams. The invention can be used for chemical vapor deposition (CVD) chamber cleaning endpoint determination and to improve fluorine utilization efficiency in remote plasma downstream CVD chamber cleaning processes.

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Allentown, PA, United States of America

Bing Ji