Air Products and Chemicals, Inc.

Versum Materials US, LLC

Huawei Technologies Co., Limited

Canon Medical Systems Corporation

University of California

Toshiba Medical Systems Corporation

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Osram Sylvania Inc.

Beijing Jingdong Century Trading Co., Ltd.

Chinese Academy of Medical Sciences

Beijing Wodong Tianjun Information Technology Co., Ltd.

Central Iron and Steel Research Institute

Boe Technology Group

Inventist, Inc.

Bing Han

Xinjian Lei

Manchao Xiao

Mark Leonard O'Neill

Haripin Chandra

Ronald Martin Pearlstein

Anupama Mallikarjunan

Liu Yang

Daniel P Spence

Steven Gerard Mayorga

Meiliang Wang

Raymond Nicholas Vrtis

Eugene Joseph Karwacki, Jr

Hansong Cheng

Kirk Scott Cuthill

Agnes Derecskei-Kovacs

Madhukar Bhaskara Rao

Robert Gordon Ridgeway

Jianheng Li

Hong Yang

Richard Ho

Yanhua Wang

Heather Regina Bowen

Taixu Tian

Minfeng Xu

Tao Wang

Chao Li

Kazuhide Hasebe

Scott Jeffrey Weigel

Nan Li

Lei Zhao

Keith A Klinedinst

Jingrong Xie

Yang Xia

Andrew David Johnson

Madis Raukas

Jian Qiang Liu

Haizhou Wang

Masato Yonezawa

Xuejing Shen

Dongling Li

Qiqi Xu

Jie Meng

Haiyan Xu

Masanobu Matsunaga

Tao Wen

Weihao Wan

Fanjie Meng

Yuhua Lu

Eugene Jospeh Karwacki, Jr

Chia-Chien Lee

Jonathan H Tao

Jan B Talbot

Kailash A Mishra

Feifei Feng

Eugene Joseph Karwacki

Sha Wang

Ye Yue

Yongyu Chen

Sulong Xu

Zhiwei Ge

Xiao Manchao

An image processing method according to an embodiment includes a specifying step, an inference step, and an integration step. In the specifying step, a first portion including a region corresponding to an anatomical site of a target and a second portion including a region different from the anatomical site are specified in the image. In the inference step, by using a deep learning model, segmentation of the region corresponding to the anatomical site is performed on the first portion and segmentation of the region different from the anatomical site is performed on the second portion, or classification and detection of an image including the region corresponding to the anatomical site is performed on the first portion and classification and detection of an image including the region different from the anatomical site is performed on the second portion. In the integration step, results of the respective processes are integrated for output.

Image processing method, image processing system, and non-transitory computer readable medium

Embodiments of the application disclose a method and device for picture coding, and a storage medium, the device for picture coding is configured to train an initial feature extraction model with first training data, to obtain a target feature extraction model; train an initial clustering model with second training data, to obtain a first clustering model; and perform picture coding on picture data according to the target feature extraction model and the first clustering model, to obtain coded data corresponding to the picture data.

Method and device for picture coding, and storage medium

An instruction prediction method and apparatus, a system, and a computer-readable storage medium relate to the field of computer technologies. The method includes: a processor obtains a plurality of to-be-executed first IBs, where any first IB includes at least one instruction to be sequentially executed, and the at least one instruction includes one branch instruction; searches, based on branch instructions included in the plurality of first IBs, at least one candidate execution path for a candidate execution path corresponding to the plurality of first IBs, where any candidate execution path indicates a jump relationship between a plurality of second IBs, and a jump relationship indicated by the candidate execution path corresponding to the plurality of first IBs includes a jump relationship between the plurality of first IBs; and predicts, based on the jump relationship between the first IBs, a next instruction corresponding to a branch instruction in each first IB.

To-be-executed instruction prediction method and system

A method for load balancing in a bit index explicit replication (BIER) network includes: a network device obtains a BIER packet, and determines, based on an identifier in the BIER packet, a target next-hop node that reaches a destination address of the first BIER packet from a plurality of next-hop nodes of the network device. Then, the network device generates a target forwarding table based on the target next-hop node, and forwards the first BIER packet based on the target forwarding table. A control plane does not perform load balancing on a BIER packet in a manner of delivering a large quantity of load balancing tables to a forwarding plane, but the forwarding plane of the network device generates the target forwarding table to perform load balancing on the BIER packet.

Method, apparatus, and device for load balancing in bit index explicit replication network

Disclosed is the use of a water-soluble realgar solid dispersion in the preparation of an erythroid differentiation inducer for bone marrow hematopoietic stem cells and/or bone marrow hematopoietic progenitor cells. The water-soluble realgar solid dispersion is prepared from raw materials comprising 1 part by weight of realgar, 1-20 parts by weight of a polymer, and 0-5 parts by weight of a surfactant. The water-soluble realgar solid dispersion can induce bone marrow hematopoietic stem and/or progenitor cells to be differentiated into red blood cells, promote the accumulation of red blood cells in bone marrow cells, effectively alleviate the decrease in the number of red blood cells caused by the suppression of the erythroid differentiation of bone marrow hematopoietic stem and/or progenitor cells, improve anemia caused by hematopoietic failure, and protect bone marrow cells from the killing effect.

Use of water-soluble realgar solid dispersion in preparation of erythroid differentiation inducer for bone marrow hematopoietic stem cells and/or bone marrow hematopoietic progenitor cells

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of RN(SiRLH), wherein R, R, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Compositions and processes for depositing carbon-doped silicon-containing films

Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200 nm and a density of about 2.2 g/cmor greater wherein the silicon-containing thin film is deposited by a deposition process selected from a group consisting of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), and the vapor deposition is conducted at one or more temperatures ranging from about 25&#xb0; C. to about 400&#xb0; C. using an alkylsilane precursor selected from the group consisting of diethylsilane, triethylsilane, and combinations thereof.

Compositions and methods for making silicon containing films

Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800&#xb0; C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot HPO, showing good etch selectivity.

Method and precursors for manufacturing 3D devices

The invention belongs to the technical field of the quantitative statistical distribution analysis of the features from characteristic images of microstructures and precipitated phases in metal materials, and relates to a quantitative statistical distribution characterization method of precipitate particles with the full field of view in a metal material. The method comprises the following steps of electrolytic corrosion of a metallic material specimen, automatic collection of characteristic images of microstructure, automatic stitching and fusion of the full-view-field microstructure images, automatic identification and segmentation of the precipitate particles and quantitative distribution characterization of the precipitate particles with the full field of view in a large-range scale. By establishing a mathematic model, the large-range automatic stitching and fusion of the characteristic images of the full-view-field microstructures in a characteristic region and the automatic segmentation and identification of the precipitate particles are realized; and the quantitative statistical distribution characterization information of the full-view-field morphology, quantity, size, distribution and the like of plentiful precipitated phases in a larger range is quickly obtained. The method has the features of being accurate, high-efficiency and informative in quantitative distribution characterization, as well as has much more statistical representativeness compared with conventional single-view-field quantitative image analysis.

Full-view-field quantitative statistical distribution characterization method of precipitate particles in metal material

A screen control method applied in the server side, including: receiving a screen practice verification request send by equipment before screen printing by the equipment, in which the verification request includes: a first identification of a screen and a second identification of the equipment; inquiring a prestored database according to the first identification and the second identification, and acquiring a first attribute value of the screen and a second attribute value of the equipment; verifying whether the screen satisfies the practice condition according to the first attribute value and the second attribute value; and sending the verification result to the equipment, so that the equipment can do corresponding operation according to the verification result.

Screen control method, system, equipment and server

Self-balancing transportation device

A medical image processing apparatus according to an embodiment includes an estimation circuitry and a tracking circuitry. The estimation circuitry is configured to estimate the activity of the myocardium across a plurality of images at different time phases from a group of images where a plurality of images containing a myocardium are chronologically arranged. The tracking circuitry is configured to set a search range for tracking the myocardium in the group according to the activity of the myocardium and perform the tracking.

Medical image processing apparatus, medical image processing method and medical image device

Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of RSi(NRR)Hwherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of RSi(OR)Hwherein x=1, 2, 3; an organoaminosilane having a formula of RN(SiR(NRR)H); an organoaminosilane having a formula of RN(SiRLH)and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NRR)H. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 650&#xb0; C. or greater is provided. In one aspect, there is provided a method to deposit a silicon oxide film or material comprising the steps of: providing a substrate in a reactor; introducing into the reactor at least one halidosiloxane precursor selected from the group of compounds having formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen source into the reactor; and purging reactor with purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited and the process is conducted at one or more temperatures ranging from about 650 to 1000&#xb0; C.

High temperature atomic layer deposition of silicon-containing films

Growing community of inventors

Beijing, China

Bing Han