Signify Holding B.v.

Semiconductor Manufacturing International (shanghai) Corporation

Bing Guo

Xiaoyan Zhao

Bongkil Kim

Honghao Zhong

Muhui Huang

Chuanmiao Zhou

Yefen Yu

A driver has a current control loop for regulating an output current, the current control loop having a controllable configuration including an electrical value with influences the conversion function of the converter. An adjusting circuit is provided to selectively deliver or not deliver output current of the converter to the load and effectively adjust a load as seen by the driver between a first level and a second level. This adjustment for example enables PWM control of the output current, in addition to the output current regulation implemented by the current control loop. The electrical value of the current control loop is saved before the adjusting circuit changes the load as seen by the driver from the first level to the second level and the saved electrical value is reapplied to the current control loop, when the adjusting circuit changes the load as seen by the driver back from the second level to the first level. A response time of the current control loop when controlling the converter to output the desired output current is reduced. The electrical value is a voltage of a capacitor in a compensation circuit of an error amplifier of the current control loop.

Driver for delivering current to a LED load

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, and a memory cell disposed on the semiconductor substrate. The memory cell includes a selection transistor and a memory transistor. The selection transistor includes a selection gate, a first source, and a first drain. The memory transistor includes a floating gate, a control gate, a second source, a second drain, and a first insulating layer disposed between the floating gate and the control gate. The semiconductor device further includes a selection gate sidewall spacer disposed near an edge of a bit line of the selection gate of the selection transistor. The selection gate sidewall spacer is separated from the selection gate by a second insulating layer. The selection gate sidewall spacer and the control gate are formed of a first material.

Semiconductor device and method of manufacturing the same

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Shanghai, China

Bing Guo