Chinese Academy of Sciences

Peking University

Yantai Zhenghai Bio-tech Co., Ltd

Other

Yantai Zhenghai Bio-technology Co., Ltd.

Institute of Genetics and Developmental Biology Chinese Acadaemy of Science

Bing Chen

Xiaoyan Liu

Jinfeng Kang

Jianwu Dai

Bin Gao

Lifeng Liu

Feifei Zhang

Wenjie Sun

Wenxue Zhao

Hang Lin

Ming Liu

Hangbing Lv

Qing Luo

Cheng Lu

Zhifeng Xiao

Yi Wang

Jie Sun

Cheng Liu

Yi Hou

Dedong Han

Yuhua Cheng

Guannan Su

Yannan Zhao

Jianshu Wei

Jiaqi Yang

Jingfeng Yang

Sili He

Weiyuan Liu

A complementary storage unit and a method of preparing the same, and a complementary memory. The complementary storage unit includes: a control transistor, a pull-up diode and a pull-down diode. The control transistor is configured to control reading and writing of the storage unit. One end of the pull-up diode is connected to a positive selection line, and the other end thereof is connected to a source end of the control transistor, so as to control a high-level input. One end of the pull-down diode is connected to a negative selection line, and the other end thereof is connected to the source end of the control transistor, so as to control a low-level input. The pull-up diode and the pull-down diode are symmetrically arranged in a first direction.

Complementary storage unit and method of preparing the same, and complementary memory

Provided are a symmetric memory cell and a BNN circuit. The symmetric memory cell includes a first complementary structure and a second complementary structure, the second complementary structure being symmetrically connected to the first complementary structure in a first direction, wherein the first complementary structure includes a first control transistor configured to be connected to the second complementary structure, the second complementary structure includes a second control transistor, a drain electrode of the second control transistor and a drain electrode of the first control transistor being symmetrically arranged in the first direction and connected to a bit line, and the symmetric memory cell is configured to store a weight value 1 or 0.

Symmetric memory cell and BNN circuit

Provided is a three dimensional tissue scaffold comprising a stem cell attracting element associated with a matrix, and fusion protein of stem cell attracting factor and collagen-binding domain, and methods of uses thereof.

Three-dimensional tissue scaffold with stem cell attracting element and use thereof

The present disclosure discloses a full adder based on resistive-switching devices and an operation method thereof. A multi-bit full adder circuit is constituted by using a cross-bar array of resistive-switching devices, wherein data of standard sums is stored on the principle diagonal of the cross-bar array in a nonvolatile manner, and carry data is stored in adjacent units on both sides of the principle diagonal. The carry data is stored according to whether the storage loop (crosstalk loop) is turned on. With the present disclosure, the multi-bit full adder circuit is significantly simplified. Thereby, additional circuits for generating a carry signal are reduced, the circuit delay and chip area are decreased, and the adder has an ability of nonvolatile storage.

Multi-bit full adder based on resistive-switching devices and operation methods thereof

Methods for reprogramming cells by culturing the cells under a condition that allows formation of a three-dimensional cell aggregate are provided. The cells and cell aggregates obtained using the methods are also provided.

Reprogramming cells by three-dimensional cultivation

Provided are activated collagen scaffold materials as well as their special fused active restoration factors useful for promoting tissue repair, such as bone damage repair or nerve injury repair. The special fused active restoration factors are fusion proteins comprising a collagen-binding domain (CBD) at N-/C-terminus of cytokines, wherein the collagen-binding domain is a polypeptide consisting of 7-27 amino acid residues with a conservative sequence shown in SEQ ID NO:4 at N-terminus.

Activated collagen scaffold materials and their special fused active restoration factors

Provided are activated collagen scaffold materials as well as their special fused active restoration factors useful for promoting tissue repair, such as bone damage repair or nerve injury repair. The special fused active restoration factors are fusion proteins comprising a collagen-binding domain (CBD) at N-/C-terminus of cytokines, wherein the collagen-binding domain is a polypeptide consisting of 7-27 amino acid residues with a conservative sequence shown in SEQ ID NO:12 at N-terminus.

A resistive switching memory device and a method for operating the same are disclosed. The device includes a plurality of resistive switching memory units arranged in a matrix, each of which includes a switching element and a resistive switching device, and the switching element being connected to a word line at its control terminal, to the resistive switching device at one terminal, and to a bit line at the other terminal; a word line decoder adapted to decode an input address signal to switch on the switching element in at least one of resistive switching memory units; and a driving circuit adapted to apply a voltage pulse whose front edge changes slowly across the resistive switching device by the bit line synchronously with the switching-on of the switching element. Using the scheme of the above embodiments, the durability characteristic of the resistive switching device can be improved, such as degradation of high-low resistance value window and the failure of the device with transition times can be reduced.

Resistive switching memory device and method for operating the same

The present disclosure provides a resistive-switching device capable of implementing multiary addition operation and a method for implementing multiary addition operation using the resistive-switching device. The resistive-switching device has a plurality of resistance values each corresponding to a respective data value stored by the resistive-switching device and ranging from a high resistance value to a low resistance value. The data value stored by the resistive-switching device is increased by '1' successively with a series of set pulses having a same pulse width and a same voltage amplitude being applied thereto. The data value stored by the resistive-switching device is set to '0' with a reset pulse being applied thereto, and meanwhile a data value stored by a higher-bit resistive-switching device is increased by &#x2018;1&#x2019; with a set pulse being applied thereto. In this way, multiary addition operation is implemented.

Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation

A neuron device includes a bottom electrode, a top electrode, and a layer of metal oxide variable resistance material sandwiched between the bottom electrode and the top electrode, in which the neuron device is switched to a normal state upon application of reset pulse, and is switched to an excitation state upon application of stimulus pulses. The neuron device has a comprehensive response to different amplitude, different width of a stimulus voltage pulse and different number of a sequence of stimulus pulses, and provides functionalities of a weighting section and a computing section. The neuron device has a simple structure, excellent scalability, quick speed, low operation voltage, and is compatible with the conventional silicon-based CMOS fabrication process, and thus suitable for mass production. The neuron device is capable of performing many biological functions and complex logic operations.

Three-layered neuron devices for neural network with reset voltage pulse

Provided are activated collagen scaffold materials as well as their special fused active restoration factors useful for promoting tissue repair, such as bone damage repair or nerve injury repair. The special fused active restoration factors are fusion proteins comprising a collagen-binding domain (CBD) at N-/C-terminus of cytokines, wherein the collagen-binding domain is a polypeptide consisting of 7-27 amino acid residues with a conservative sequence shown in SEQ ID NO:1 at N-terminus.

The invention provides a method of testing reliability of a semiconductor device, wherein the semiconductor device has negative bias temperature instability NBTI. The method comprises steps of: measuring a NBTI curve of a first set of semiconductor devices; measuring 1/f noise power spectrum density and drain current at a predetermined frequency for the first set of the semiconductor devices, under a condition that the first set of the semiconductor devices are biased at a gate electric field; measuring an equivalent oxide thickness EOT of gate dielectric of the first set of the semiconductor devices; measuring 1/f noise power spectrum density and drain current at the predetermined frequency for a second set of semiconductor devices, under a condition that the second set of the semiconductor devices are biased at the gate electric field; measuring an EOT of gate dielectric of the second set of the semiconductor devices; and evaluating a degradation characteristic of the second set of the semiconductor devices by using the NBTI curve of a first set of the semiconductor devices. The method saves the time required for testing the reliability of a large numbers of semiconductor devices, and will not cause damages to the second set of semiconductor devices.

Method of testing reliability of semiconductor device

A toilet flushing method causes high-pressure flush water, provided by a flow pipe, to spray along the baffle in the bottom of the trap of a toilet bowl and causes the flush water used for washing the toilet bowl to spray into the toilet bowl. The high-pressure flush water discharges the egesta with water in order to supply sealing water to the trap. A toilet, which uses components for improving the prior art toilet, carries out the flushing method.

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Beijing, China

Bing Chen