Netlogic Microsystems, Inc

Other

Broadcom Corporation

Numem Inc.

Bindiganavale S Nataraj

Sandeep Khanna

Varadarajan Srinivasan

Vinay Iyengar

Jose Pio Pereira

Chetan Deshpande

Rupesh Ranen Roy

Nilesh A Gharia

Hok F Wong

Dimitri Argyres

Venkat Rajendher Reddy Gaddam

Michael E Ichiriu

Charles C Huse

Kumaresh Kavedi

John Zimmer

Circuitry for performing neural-network calculations includes a plurality of compute circuits, arranged in parallel with respective inputs and outputs, to receive function arguments for a node of a neural network on their respective inputs, compute values of a plurality of activation functions using the function arguments, and provide the values on their respective outputs. Each compute circuit of the plurality of compute circuits is to compute the values of a respective activation function of the plurality of activation functions. The circuitry also includes a multiplexor to select between the respective outputs of the plurality of compute circuits and to provide the values on a selected output as activation-function values for the node of the neural network, based on an activation-function selection signal.

Hardware implementations of activation functions in neural networks

A memory includes an array with rows and columns of memory cells. The rows include a first row and a second row. The memory also includes a plurality of logic gates in the array. Each logic gate of the plurality of logic gates includes a first input coupled to a respective memory cell in the first row, a second input coupled to a respective memory cell in the second row, and an output. The memory further includes a plurality of sense lines in the array. The output of each logic gate of the plurality of logic gates is coupled to a sense line of the plurality of sense lines.

Reconfigurable compute memory

A memory includes an array with rows and columns of memory cells. The rows include a first row and a second row, which may be adjacent. The memory also includes a plurality of logic gates in the array. Each logic gate of the plurality of logic gates includes a first input coupled to a respective memory cell in the first row, a second input coupled to a respective memory cell in the second row, and an output. The first and second inputs may be connected to internal nodes within the respective memory cells without intervening transistors. The memory further includes a plurality of sense lines in the array. The output of each logic gate of the plurality of logic gates is coupled to a sense line of the plurality of sense lines.

A content addressable memory (CAM) device can include a plurality of CAM cells each formed within a cell area of a substrate. Each cell area can have a cell length dimension in a first direction parallel to a substrate surface. The CAM device can also include at least one common line comprising a contiguous region of the substrate doped to a first conductivity type and formed in a base semiconductor region doped to a second conductivity type. The common line can extend in the first direction for more than one cell length and can be commonly coupled to non-power supply connections to the plurality of CAM cells.

Content addressable memory (CAM) device having substrate array line structure

A CAM device includes a CAM array that can implement column redundancy in which a defective column segment in a selected block can be functionally replaced by a selected column segment of the same block, and/or by a spare column segment of the same block.

Content addressable memory having column segment redundancy

A content addressable memory (CAM) device having any number of rows, each of the rows including a match line connected to a plurality of CAM cells, a match line detector circuit, and an incremental match line charge circuit. The detector circuit generates a feedback signal based on a detected match line voltage. The charge circuit partially pre-charges the match line to an intermediate voltage during a pre-charge phase of a compare operation, and then selectively charges the match line higher towards a supply voltage in response to the feedback signal.

Incremental adaptive match line charging with calibration

A method and apparatus for performing half-column redundancy in a CAM device is disclosed, capable of replacing a defective half-column in the CAM array with only one half of another column. For example, present embodiments can provide twice the redundancy by replacing only one half of a defective CAM cell with one half of a spare cell or of a selected cell. The half-column redundancy disclosed herein provides finer granularity and higher effectiveness to the redundancy scheme as compared to conventional redundancy schemes employed on a CAM array. Thus, the CAM array can be designed and fabricated with a higher yield without having to accommodate for more spare columns than employed by conventional redundancy schemes, allowing for more efficient use of silicon area and a more robust CAM array design.

Content addressable memory having half-column redundancy

A CAM device is disclosed that includes an array of CAM cells in which the compare circuits of groups of CAM cells are connected together using a conductive layer interposed between a polysilicon layer of the CAM device and the metal-layer of the CAM device. This allows the data lines (e.g., the bit lines and/or comparand lines) of the CAM array to be formed in the metal-layer of the CAM device, which in turn allows the match lines of the CAM array to be formed in the metal-layer of the CAM device. The conductive layer, which may be a silicide layer, is connected to the match line by a via extending from the conductive layer through the metal-layer to the metal-layer.

Content addressable memory array having local interconnects

An integrated circuit device can include a core section coupled to a plurality of signal paths having a predetermined physical order with respect to one another. A configuration circuit can selectively connect each signal path to a corresponding one of a plurality of physical connection points to the IC device according to one of at least two different physical orders in response to configuration information.

Integrated circuit with reconfigurable inputs/outputs

A method may include selectively coupling a result line to a reference node in response to a compare data value being applied to a plurality of compare cell circuits; precharging the result line to the precharge potential by enabling a first precharge path while the compare data value is being applied; and after precharging the result line by enabling the first precharge path, disabling the first precharge path to place it in a high impedance state.

Precharge circuits and methods for content addressable memory (CAM) and related devices

Present embodiments describe a CAM device having a segmented CAM array. Each segment of the CAM array, or cell blocks, includes one or more rows of CAM cells. One or more of the cell blocks in the CAM array are selectively enabled during a search operation based on a detected matching condition of another cell block. By selectively enabling cell blocks during search operations only when needed, energy consumption is reduced. Selectively enabling a cell block includes selectively pre-charging match lines to the cell block, selectively enabling word lines to the cell block, and selectively enabling comparand line to the cell block. In accordance with certain embodiments, the CAM device is configurable to perform search operations in a pipelined manner. Accordingly, the CAM device is capable of performing multiple search operations simultaneously.

Segmented content addressable memory device having pipelined compare operations

An semiconductor device having a plurality of fabrication layers. A first region of a first fabrication layer of the semiconductor device is revised. To signal the revision, a connectivity structure in a second region of the first fabrication layer is omitted to interrupt an otherwise continuous signal path that extends through a plurality of interconnection layers of the semiconductor device.

Integrated circuit device with electronically accessible device identifier

A content addressable memory (CAM) device having any number of rows, each of the rows including a match line connected to a plurality of CAM cells, a match line detector circuit, and a pre-charge circuit. The detector circuit detects a voltage of the match line and generates a feedback signal based on the detected match line voltage. The pre-charge circuit adaptively charges the match line in response to the feedback signal.

Adaptive match line charging

A content addressable memory (CAM) device includes a CAM array and a configuration circuit. The CAM array has a plurality of rows of CAM cells, each row segmented into a plurality of row segments, each row segment including a plurality of CAM cells coupled to a corresponding match line segment, and a match line control circuit having an input coupled to the corresponding match line segment, an output coupled to the match line segment in a next row segment, and a control terminal to receive a corresponding enable signal. The configuration circuit has an input to receive configuration information indicative of a width and depth configuration of the CAM array and having outputs to generate the enable signals.

Low power content addressable memory device having selectable cascaded array segments

A memory device operates in a calibration mode during which the effects of bit line leakage current are measured and to operate in a normal mode during which the bit line current is adjusted to compensate for leakage according to the results of the calibration mode. In the calibration mode, a leakage-free sense operation is performed to determine the differential voltage generated on the bit lines in response to a data value. Then, a leakage-susceptible test read operation is performed to determine the differential voltage generated on the bit lines in response to the data value. A detection circuit measures the difference between the differential voltages generated in the leakage-free and leakage-susceptible test read operations to generate a compensation signal, which subsequently adjusts the bit line compensation current during the normal mode.

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Cupertino, CA, United States of America

Bindiganavale S Nataraj