Ip2ipo Innovations Limited

Bin Zou

Andrei Mihai

Jan Zemen

Evgeniy Donchev

David Boldrin

Andrei Paul Mihai

The disclosed non-volatile memory cell comprises a storage layer of an electrically insulating polarisable material in which data is recordable as a direction of electric polarisation, preferably of ferroelectric material, arranged between a magnetically frustrated layer, preferably of Mn-based antiperovskite piezomagnetic material and a conduction electrode. The magnetically frustrated layer has a different change in density of states relative to the conduction electrode in response to a change in electric polarisation of the storage layer, such that an electron or spin tunnelling resistance across the storage layer is dependent on the direction of electric polarisation.

Non-volatile memory cell

A non-volatile memory cell comprising: a storage layer comprised of a ferromagnetic or ferroelectric material in which data is recordable as a direction of magnetic or electric polarisation; a piezomagnetic layer comprised of an antiperovskite piezomagnetic material selectively having a first type of effect on the storage layer and a second type of effect on the storage layer dependent upon the magnetic state and strain in the piezomagnetic layer; and a strain inducing layer for inducing a strain in the piezomagnetic layer thereby to switch from the first type of effect to the second type of effect.

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Bin Zou