Corning Incorporated

Bin Zhu

Rajesh Vaddi

Robert George Manley

Ming-Huang Huang

Karan Mehrotra

Nikolay Zhelev Zhelev

Robert Bumju Lee

Barry James Paddock

A method for making a thin film transistor device includes forming a semiconductor film on a flexible substrate comprising a thin ribbon of refractory material that does not degrade when heated to temperatures greater than about 750° C. The semiconductor film is crystallized by heating the semiconductor film and the flexible substrate to at least about 750° C. A dielectric material is deposited on the crystallized semiconductor film. Gate, source, and drain electrodes are formed on the dielectric material.

Fabrication of high mobility thin film transistors on thin and flexible ceramic substrate

A thin film transistor (TFT) liquid crystal display (LCD) comprises a plurality of image pixels demarcated between an overlying liquid crystal display layer and an underlying glass substrate. Each image pixel comprises a dedicated top-gate TFT disposed over the glass substrate. Each top-gate thin film transistor comprises a process sensitive semiconductor layer disposed over the glass substrate, and a source electrode and a drain electrode disposed over the process sensitive semiconductor layer. The process sensitive semiconductor layer forms a process sensitive semiconductor active layer between the source electrode and the drain electrode and an active layer protection film is disposed over the process sensitive semiconductor active layer. A gate dielectric layer is disposed over the active layer protection film between the source electrode and the drain electrode and a gate electrode is disposed over the gate dielectric layer.

Methods for forming thin film transistors on a glass substrate and liquid crystal displays formed therefrom

A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material.

Polar elastomer microstructures and methods for fabricating same

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Ithaca, NY, United States of America

Bin Zhu