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Hangzhou Haicun Information Technology Co., Ltd.

Xiamen Haicun IP Technology LLC

Bin Yu

Guobiao Zhang

Jinfeng Kang

Hongyu Yu

Jin He

Chen Shen

Chenchang Zhan

XiangDong Lu

XuGuang Wang

DongYun Zhang

ZhiWei Liu

RangYu Deng

The present invention discloses a three-dimensional one-time-programmable memory (3D-OTP) comprising an off-die address/data-translator (A/D-translator). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least an A/D-translator of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The A/D-translator converts at least an address and/or data between logic and physical spaces.

Three-dimensional one-time-programmable memory comprising off-die address/data-translator

The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.

Small-grain three-dimensional memory

Growing community of inventors

Hangzhou, China

Bin Yu