Kla Tencor Corporation

Kla-tencor Technologies Corporation

Kla Instruments Corporation

Other

Bin-Ming Benjamin Tsai

Yung-Ho Alex Chuang

David R Shafer

J Joseph Armstrong

Christopher R Fairley

Tao-Yi Fu

David Lee Brown

Gershon Perelman

Xuefeng Liu

Akella V S Satya

Lena Nicolaides

Scott Allen Young

Richard William Solarz

John Fielden

David Lewis Adler

John Josef Hench

Jaydeep K Sinha

Thaddeus Gerard Dziura

Alex Salnik

Jingjing Zhang

Neil W Richardson

Pradeep Vukkadala

David J Walker

Brian C Leslie

Gustavo A Pinto

Robert Thomas Long

Oreste Donzella

Russell M Pon

Mehdi Vaez-Iravani

Guoheng Zhao

Ady Levy

Jason Z Lin

George H Zapalac, Jr

Samuel S H Ngai

Alexei Salnik

Tao Yi Fu

David Ross Shafer

David L Brown

Joseph J Armstrong

Prediction based systems and methods for optimizing wafer chucking and lithography control are disclosed. Distortions predicted to occur when a wafer is chucked by a chucking device are calculated and are utilized to control chucking parameters of the chucking device. Chucking parameters may include chucking pressures and chucking sequences. In addition, predicted distortions may also be utilized to facilitate application of anticipatory corrections. Controlling chucking parameters and/or applying anticipatory corrections help reducing or minimizing overlay errors.

Prediction based chucking and lithography control optimization

Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.

Method of optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology

Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100&#xd7; within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers

Optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology

The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurality of values of at least one parameter of the wafer following ion implantation of the wafer by the implanter, wherein the first dopant metrology system and the second dopant metrology system are communicatively coupled, an annealer configured to anneal the wafer following ion implantation, and a third dopant metrology system configured to measure a third plurality of values of at least one parameter of the wafer following annealing of the wafer by the annealer, wherein the second dopant metrology system and the third dopant metrology system are communicatively coupled.

Dopant metrology with information feedforward and feedback

Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Process aware metrology

Systems and methods for process aware metrology are provided.

An ultra-broadband ultraviolet (UV) catadioptric imaging microscope system with wide-range zoom capability. The microscope system, which includes a catadioptric lens group and a zooming tube lens group, has high optical resolution in the deep UV wavelengths, continuously adjustable magnification, and a high numerical aperture. The system integrates microscope modules such as objectives, tube lenses and zoom optics to reduce the number of components, and to simplify the system manufacturing process. The preferred embodiment offers excellent image quality across a very broad deep ultraviolet spectral range, combined with an all-refractive zooming tube lens. The zooming tube lens is modified to compensate for higher-order chromatic aberrations that would normally limit performance.

Ultra-broadband UV microscope imaging system with wide range zoom capability

An apparatus for inducing a current in a solar cell substrate. A substrate receiving surface receives the substrate, and an array of a plurality of individually addressable light sources illuminates the substrate in a sequenced manner. A sequencer controls the sequenced manner of illumination of the substrate by the array. A front side electrical contact makes electrical contact to a front side of the substrate, and a back side electrical contact makes electrical contact to a back side of the substrate. A meter is electrically connected to the front side electrical contact and the back side electrical contact, and senses the current induced in the substrate during the sequenced illumination of the substrate.

Segmented optical and electrical testing for photovoltaic devices

A system and method for inspecting a specimen, such as a semiconductor wafer, including illuminating at least a portion of the specimen using an excimer source using at least one relatively intense wavelength from the source, detecting radiation received from the illuminated portion of the specimen, analyzing the detected radiation for potential defects present in the specimen portion.

Excimer laser inspection system

Samples subject to ion implantation are measured using a modulated optical reflectance system and the results of the measurements are compared to specification ranges for acceptable samples and a plurality of parametric ranges. Each parametric range is associated with a different known type of implantation fault. Measurement results outside of the specification range may be characterized by fault type by comparing the measurement results to a plurality of parametric ranges. In this way, a fault type may be quickly identified and the corresponding source of the fault may be corrected.

Ion implant metrology system with fault detection and identification

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Saratoga, CA, United States of America

Bin-Ming Benjamin Tsai