University of California

Globalfoundries Singapore Pte. Ltd.

National University of Singapore

Other

Globalfoundries Inc.

Chugai Seiyaku Kabushiki Kaisha

The Hong Kong University of Science and Technology

Xilinx, Inc.

Lemon Inc.

Calient Networks, Inc.

Data Storage Institute

Sirigen, Inc.

Bin Liu

Guillermo C Bazan

Eng Huat Toh

Shyue Seng Tan

Kiok Boone Elgin Quek

Brent S Gaylord

Shu Wang

James David Marks

Ruchil Kumar Jain

Yang Su

Scott Bidlingmaier

Alan J Heeger

Desmond Jia Jun Loy

Xiong Gong

Wanli Ma

Parameswar K Iyer

Dimitri Houssameddine

Benzhong Tang

Peidong Yang

Janice W Hong

Lanxiang Wang

Gary David Lopaschuk

Ali Shakouri

Jason Roland Dyck

Jie Fei Cheng

Chenchen Jacob Wang

Thomas Arrhenius

Samarth Agarwal

Alex Michael Nadzan

Christopher R Behrens

Dan Ding

Namkyung Lee

Haibin Shi

Yue Li

David Mark Wallace

Kangho Lee

John E Bowers

Glenn P Bartholomew

Elgin Kiok Boone Quek

Khee Yong Lim

Mi Chen

Soh Yun Siah

Jean M Wheeler

Mark E Wilson

Candace K Chan

Ping Zheng

Masahiro Nishimoto

Wing Yip Lam

Zheng Chen

Yu Xuan Zhang

David Edward Welsh

Anjun Qin

Sijie Chen

Sovouthy Tith

Jie Liu

Yujin Huang

Chong Liu

Jingsheng Jason Cong

Rossy Serafimov

Hongyu Xiong

Yuan Gao

Jacques R Fresco

Han Wang

Yiqi Feng

Alexander Mikhailovsky

Jianzhao Liu

Yuanjian Xu

Tsz Kin Kwok

Rui Li

Jiayu Liao

Wei Qin

Qingyi Lu

Xiangyu Zeng

Hao Ming Chen

Kanyi Pu

Yinjie Ding

Hadjar Benmansour

Eng-Huat Toh

Blake T Aftab

Lynn C Klotz

Zhiru Zhang

Kai Li

Patrick Abraham

Bernhard Koehler

Daniel W Sherbenou

Jingzhi Sun

Jianwei Sun

Xiaodong Zhu

Ke Shuai

Chan Chung

Xiaoping Rao

Jun Long Geng

R Kehl Sink

Qiuli Zhao

Boo-Gyoun Kim

Ming Tsang Tsai

Tianyu Zhang

Jinyao Tang

Yihan Yang

Srinivasan Gopalaswamy

According to various embodiments, there is provided a sensor device that includes: a substrate and two semiconductor structures. Each semiconductor structure includes a source region and a drain region at least partially disposed within the substrate, a channel region between the source region and the drain region, and a gate region. A first semiconductor structure of the two semiconductor structures further includes a sensing element electrically connected to the first gate structure. The sensing element is configured to receive a solution. The drain regions of the two semiconductor structures are electrically coupled. The source regions of the two semiconductor structures are also electrically coupled. A mobility of charge carriers of the channel region of a second semiconductor structure of the two semiconductor structures is lower than a mobility of charge carriers of the channel region of the first semiconductor structure.

Sensor devices

Light harvesting luminescent multichromophores that are configured upon excitation to transfer energy to, and amplify the emission from, an acceptor signaling chromophore in energy-receiving proximity therewith are provided. Also provided are compositions for labelling a target. The labelling composition may include a donor light harvesting multichromophore and an acceptor signaling chromophore in energy-receiving proximity to the donor light harvesting multichromophore. Also provided is an aqueous composition for labelling a target, including: a donor light harvesting multichromophore; an acceptor signaling chromophore in energy-receiving proximity therewith; and a sensor biomolecule. Methods for using the subject compositions are also provided.

Light harvesting multichromophore compositions and methods of using the same

The present disclosure relates to an engineered antibody that co-engages a cell type-selective (or specific) antigen (guide) and a signaling receptor (effector) on a target cell. In some instances, the engineered antibody is capable of modulating a signaling pathway on a target cell. In other embodiments, an engineered antibody of the present disclosure is administered to a subject for the treatment of a disease or condition.

Engineered antibodies and uses thereof

There are provided methods, devices, and computer program products for similarity determination. In a method, first and second access data are obtained for a first and a second group of users who access a first and a second website, respectively. A first and a second jump path are generated for the first and second groups of users based on the first and second access data, respectively. The first and second jump paths describe access history for the first and second groups of users among webpages in the first and second websites, respectively. A similarity is determined between the first and second websites based on the first and second jump paths. Here, access data are used for similarity determination and unvisited webpages are not considered in the similarity determination. Therefore, the computation workload may be lowered, and the noise caused by the unvisited webpages may be reduced.

Website similarity determination

Structures including non-volatile memory elements and methods of forming such structures. The structure includes a first non-volatile memory element, a second non-volatile memory element, and temperature sensing electronics coupled to the first non-volatile memory element and the second non-volatile memory element.

On-chip temperature sensing with non-volatile memory elements

Methods are provided for identifying and selecting antibodies that are internalized into cells via the macropinocytosis pathway. Additionally antibodies that are internalized via this pathway are provided as well as immunoconjugates comprising such antibodies.

Tumor selective macropinocytosis-dependent rapidly internalizing antibodies

Disclosed herein are methods of treating a subject having a cancer characterized by a modification at biomarker 1q21, which comprises administering to the subject a therapeutically effective amount of an anti-CD46 antibody.

Anti-CD46 antibodies and methods of use

Structures for a non-volatile memory and methods of forming and using such structures. A resistive memory element includes a first electrode, a second electrode, and a switching layer arranged between the first electrode and the second electrode. A transistor includes a drain coupled with the second electrode. The switching layer has a top surface, and the first electrode is arranged on a first portion of the top surface of the switching layer. A hardmask, which is composed of a dielectric material, is arranged on a second portion of the top surface of the switching layer.

Non-volatile memory elements with filament confinement

Sensor devices for detecting a pH change in a solution

Structures for a Hall sensor and methods of forming a structure for a Hall sensor. The structure includes a semiconductor body having a top surface and a sloped sidewall defining a Hall surface that intersects the top surface. The structure further includes a well in the semiconductor body and multiple contacts in the semiconductor body. The well has a section positioned in part beneath the top surface and in part beneath the Hall surface. Each contact is coupled to the section of the well beneath the top surface of the semiconductor body.

Hall sensors with a three-dimensional structure

In various embodiments various cancer specific antibodies and immunoconjugates are provided. In certain embodiments the antibodies specifically bind and are internalized into a prostate cancer cell, where the antibodies specifically binds cells that express or overexpress a CD46, and where the antibodies specifically bind sushi domain 1 of said CD46 (CD46 CPP1).

Internalizing human monoclonal antibodies targeting prostate and other cancer cells

In a non-limiting embodiment, a magnetic memory device includes a memory component having a plurality of magnetic storage elements for storing memory data, and one or more sensor components configured to detect a magnetic field external to the memory component. The sensor component outputs a signal to one or more components of the magnetic memory device based on the detected magnetic field. The memory component is configured to be terminated when the signal is above a predetermined threshold value. In some embodiments, a magnetic field is generated in a direction opposite to the direction of the detected external magnetic field when the signal is above the predetermined threshold value.

Magnetic memory devices with magnetic field sensing and shielding

Disclosed herein is a donor-acceptor-donor (D-A-D) compound of formula I, where in the acceptors are mono-substituted tetraphenylethylene moieties. Also disclosed herein are fluorescent nanodots that comprise the compound of formula (I) and uses of said compound or nanodots in in vivo imaging or detecting of cancer cells in a subject.

Methods and compositions for near infrared fluorescent nanodots with aggregation-induced emission characteristics

A memory device may include a first conductivity region, and second and third conductivity regions arranged at least partially within the first conductivity region. The first and second conductivity regions may have a different conductivity type from at least a part of the third conductivity region. The memory device may include first and second gates arranged over the third conductivity region. The second conductivity region may be coupled to a source line, and the gates may be coupled to respective word lines. When a predetermined write voltage difference is applied between the source line and a word line, an oxide layer of the gate coupled to the word line may break down to form a conductive link between the gate electrode of the gate and the third conductivity region. The memory device may have a smaller cell area, and may be capable of operating at both higher and lower voltages.

Memory device and a method for forming the memory device

Growing community of inventors

Singapore, Singapore

Bin Liu