Netlogic Microsystems, Inc

Bin Jiang

Dinesh Maheshwari

Andrew J Wright

Bartosz Banachowicz

A ternary content addressable memory (TCAM) cell circuit formed in a TCAM memory cell array having cells arranged in rows and columns can include a first storage circuit with first and second data path, a second storage circuit with a third and fourth data path, and a compare circuit. No more than four conductive lines in a column wise direction have a direct electrical connection to the TCAM cell. Such conductive lines can include a first bit line coupled to the first data path and the third data path and a second bit line coupled to the second data path and the fourth data path.

Ternary content addressable memory (TCAM) cells with low signal line numbers

A pseudo ternary content addressable memory (PTCAM) device () can include a number of PTCAM blocks (-to-), each of which can include a number of standard PTCAM rows (-to-) and a standard memory row (-to-) for storing and providing mask information for the PTCAM rows. Redundancy for replacing a defective standard PTCAM row can be provided by a redundant section () that include fewer PTCAM rows than in a PTCAM block (-to-). Non-defective PTCAM rows within a standard PTCAM block containing a defective PTCAM row can continue to operate.

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Milpitas, CA, United States of America

Bin Jiang