Advanced Micro Devices Corporation

Bill Chen

Balaraman Mani

Che-Hoo Ng

Contamination of semiconductor wafers are minimized during implantation processes within an implantation system. An implantation chamber of the implantation system and components within the implantation chamber are coated with additional material to minimize contaminants within the implantation chamber. For example, surfaces of the implantation chamber and/or the components of the implantation chamber are coated by performing an implantation process with a coating dopant before a semiconductor wafer is placed within the implantation chamber. In this manner, contaminants on the surfaces of the implantation chamber and/or the components within the implantation chamber are substantially coated and encapsulated with the coating dopant to prevent contact of the contaminant with the semiconductor wafer placed within the implantation chamber. Alternatively, shields are placed on surfaces of the implantation chamber and/or on surfaces of the components of the implantation chamber during an implantation process for a first semiconductor wafer having a contaminant source. Such shields are amenable for absorbing the contaminant and are removed after this implantation process and before a second semiconductor wafer is placed within the implantation chamber to minimize contamination of the second semiconductor wafer.

Minimized contamination of semiconductor wafers within an implantation system

For depositing semiconductor films on a plurality of sets of semiconductor wafers, a first set of semiconductor wafers carried by a wafer boat are placed within a reaction chamber. An in-situ doped amorphous semiconductor film is deposited on the first set of semiconductor wafers while the first set of semiconductor wafers carried by the wafer boat are within the reaction chamber. The first set of semiconductor wafers carried by the wafer boat are removed from the reaction chamber, and the first set of semiconductor wafers are removed from the wafer boat. The wafer boat that is empty of any semiconductor wafers is placed back within the reaction chamber. A first undoped semiconductor film having a thickness in a range of from about 8,000 &angst; (angstroms) to about 12,000 &angst; (angstroms) is deposited on the wafer boat and on components of the reaction chamber. The wafer boat is then removed from the reaction chamber, and a second set of semiconductor wafers are loaded within the wafer boat. The wafer boat having the second set of semiconductor wafers loaded therein is placed within the reaction chamber. A second undoped semiconductor film is deposited on the second set of semiconductor wafers while the second set of semiconductor wafers carried by the wafer boat are within the reaction chamber. In this manner, the in-situ phosphorous doped amorphous silicon film is deposited on the first set of semiconductor wafers and the undoped polysilicon film is deposited on the second set of semiconductor wafers within the same reaction chamber to minimize cost and labor during integrated circuit manufacture.

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Saratoga, CA, United States of America

Bill Chen