Changxin Memory Technologies, Inc.

Autochips Inc.

Biao Zhang

Embodiments of the present application relate to a method for manufacturing a semiconductor structure, includes: forming a contact metal layer on a silicon substrate; performing a plasma treatment process, and forming an oxygen isolation layer on a surface of the contact metal layer; and performing a silicidation reaction process, and converting the contact metal layer into a metal silicide layer.

Method of making a metal silicide contact to a silicon substrate

A method and apparatus for playing a media file are disclosed. The method includes determining whether a resource-substitution process needs to be performed; and selecting a substitute resource from a candidate resource set to replace an original resource in the media file to play, when the resource-substitution process needs to be performed.

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Hefei, China

Biao Zhang