Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Bianca Pohl-Klein

Juliane Kechele

Daniel Bichler

Simon Dallmeir

Sonja Tragl

Raquel De La Peña Alonso

A method is provided for producing a pulverulent precursor material of the general formula M1M2(Si,Al)(O,N)or M1M2SiAlNhaving the method steps A) producing a pulverulent mixture of starting materials, B) calcining the mixture under a protective gas atmosphere and subsequent grinding, wherein in method step A) at least one nitride with a specific surface area of greater than 2 m/g is selected as starting material. A pulverulent precursor material and the use thereof are additionally provided.

Method for producing a powdered precursor material, powdered precursor material and use thereof

A method for producing a luminescent material includes producing a mixture of starting substances, wherein the starting substances have a first component and a second component. The first component is selected from a group that comprises aluminum, silicon, at least one element of the 2nd main group of the periodic table and at least one element of the lanthanides and combinations thereof. The second component comprises oxygen and/or nitrogen. The method also includes annealing the mixture at a temperature of at least 1300&#xb0; C. in a reducing atmosphere. After method the annealing, at least one or several phases are obtained. At least one phase comprises a luminescent material. The luminescent material absorbs at least a portion of an electromagnetic primary radiation in the UV or blue range and emits an electromagnetic secondary radiation with an emission maximum of greater than or equal to 600 nm.

Method for producing a luminescent material, luminescent material and optoelectronic component

A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (CaZnMgSrBaX)SiN, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0&#x3c;a&#x3c;1 and 0&#x2266;b&#x2266;1 and 0&#x2266;c&#x2266; and 0&#x2266;d&#x2266;1 and 0&#x2266;e&#x2266;1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.

Method for producing a pulverulent precursor material, pulverulent precursor material, and use of pulverulent precursor material

A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaSr) AlSiN:X1 II:(CaSrLi) AISi (NF)3:X2 III: ZAlSiN: X3 IV: (ZLi)AlSi(NF): X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m/g and smaller than or equal to 100 m/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550&#xb0; C.

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Gilching, Germany

Bianca Pohl-Klein