Globalfoundries Singapore Pte. Ltd.

Agency for Science, Technology and Research

Bhushan Bharat

Juan Boon Tan

Wanbing Yi

Danny Pak-Chum Shum

Yi Jiang

Mahesh Bhatkar

Shan Gao

Teck Guan Lim

Eva Wai Leong Ching

Wei Yi Lim

Michael Han Kim Kwong

Shielded semiconductor devices and methods for fabricating shielded semiconductor devices are provided. An exemplary magnetically shielded semiconductor device includes a substrate having a top surface and a bottom surface. An electromagnetic-field-susceptible semiconductor component is located on and/or in the substrate. The magnetically shielded semiconductor device includes a top magnetic shield located over the top surface of the substrate. Further, the magnetically shielded semiconductor device includes a bottom magnetic shield located under the bottom surface of the substrate. Also, the magnetically shielded semiconductor device includes a sidewall magnetic shield located between the top magnetic shield and the bottom magnetic shield.

Shielded magnetoresistive random access memory devices and methods for fabricating the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate having a buried insulator layer and an active layer overlying the buried insulator layer. A transistor overlies the buried insulator layer, and a memory cell underlies the buried insulator layer. As such, the memory cell and the transistor are on opposite sides of the buried insulator layer.

Integrated circuits with memory cells and methods for producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a capacitor, where the capacitor includes a first capacitor plate and a second capacitor plate. The first capacitor plate includes a first memory cell, and the second capacitor plate includes a second memory cell. The capacitor is utilized as a functional capacitor in the integrated circuit.

Integrated circuits with vertical capacitors and methods for producing the same

Growing community of inventors

Singapore, Singapore

Bhushan Bharat