California Micro Devices Corp.

Other

Bhasker B Rao

Ashok Kumar Chalaka

Horst Leuschner

Jeffrey C Kalb

A thin film protected capacitor structure having a thin film capacitor and a protection device is provided on an integrated circuit wafer. The wafer has a low resistivity substrate of a first type disposed under an epitaxial layer of a second type different from the first type. The structure includes a first heavily doped region, which is of the first type, in and through the epitaxial layer, and an oxide layer having a first oxide region disposed above the first heavily doped region. The first heavily doped region and the low resistivity substrate form the first plate of the thin film capacitor. There is also included a metal layer disposed above the first oxide region. A portion of this metal layer forms the second plate of the thin film capacitor. Between the second plate and the first plate, the aforementioned first oxide region represents the insulating dielectric. There is also included a second heavily doped region in the epitaxial layer. This second heavily doped region, being of the first type and in electrical contact with the metal layer, has a thickness that is less than the thickness of the epitaxial layer. The protection device is formed from this second heavily doped region, the epitaxial layer, and the low resistivity substrate.

Integrated RC filters

A semiconductor device which has a resistor, a capacitor, a Schottky diode, and an ESD protection device all formed on a single semiconductor substrate. The resistor and the capacitor are coupled together in series. The Schottky diode and the ESD protection device are coupled in parallel to the series connection of the resistor and capacitor.

Semiconductor device with integrated RC network and schottky diode

ESD-protected thin film capacitor structures

Method of making a semiconductor device with integrated RC network and

A semiconductor device which has a resistor, a capacitor, and a Schottky diode all formed on a single semiconductor substrate. The capacitor comprises a dielectric region between two metal regions. The resistor comprises an N.sup.+ -type well. The Schottky diode comprises an N-type tub, a metal region in contact with the tub, and an N.sup.+ -type region formed in the N-type tub. The resistor and capacitor are coupled by a metal region which contacts one of the metal regions of the capacitor and the N.sup.+ -type well of the resistor. The resistor and Schottky diode are coupled by a metal region which contacts the N.sup.+ -type well of the resistor and the N.sup.+ -type well of the Schottky diode.

Growing community of inventors

Chandler, AZ, United States of America

Bhasker B Rao