Palo Alto Research Center Inc.

Beverly Russo

William S Wong

Michael L Chabinyc

Rene A Lujan

Scott J Limb

Peter Johan Nystrom

Karl Anthony Littau

Steven A Buhler

Cathie J Burke

Scott Eugene Solberg

Michael C Weisberg

Richard Schmachtenberg, Iii

Scott Jong Ho Limb

Sharon S Berger

Michael Yu Tak Young

Thomas Long

Timothy Trang

A digital lithographic process first deposits a mask layer comprised of print patterned mask features. The print patterned mask features define gaps into which a target material may be deposited, preferably through a digital lithographic process. The target material is cured or hardened, if necessary, into target features. The mask layer is then selectively removed. The remaining target features may then be used as exposure or etch masks, physical structures such as fluid containment elements, etc. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.

Additive printed mask process and structures produced thereby

A liquid drop ejector comprising a jet stack, thin film or thick film heaters formed on the surface of the jet stack, and at least one thin film or thick film temperature sensor operative to provide feedback temperature control for the thin film or thick film heater elements is provided. In one form, the liquid drop ejector also has the thin film or thick film heater elements grouped in segments that are operative to be individually controlled. In addition, in another form, the signal lines provided to the liquid drop ejector are patterned to allow for more uniform resistance over the span of the liquid drop ejector.

Thin film and thick film heater and control architecture for a liquid drop ejector

Susceptibility of darkfield etch masks (majority of the mask area is opaque) to pinhole defects, transferred pattern, non-uniformity, etc. due to ejector dropout or drop misdirection, and long duty cycles due to large-area coverage, when using digital lithography (or print patterning) is addressed by using a clear-field print pattern that is then coated with etch resist material. The printed clear field pattern is selectively removed to form an inverse pattern (darkfield) within the coated resist layer. Etching then removes selected portions of an underlying (e.g., encapsulation, conductive, etc.) layer. Removal of the mask produces a layer with large-area features with substantially reduced defects.

Method of forming a darkfield etch mask

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Sunnyvale, CA, United States of America

Beverly Russo