Basf Se Corporation

Bettina Drescher

Yuzhuo Li

Bastian Marten Noller

Christophe Gillot

Ning Gao

A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or SiGematerial with 0.1&#x2266;x&#x3c;1 in the presence of a chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an oxidizing agent, (C) at least one type of an organic compound which comprises at least {k} moieties (Z), but excluding salts whose anions are inorganic and whose only organic cation is [NRRRR], wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (&#x2014;OH), alkoxy (&#x2014;OR), heterocyclic alkoxy (&#x2014;ORas part of a heterocyclic structure), carboxylic acid (&#x2014;COOH), carboxylate (&#x2014;COOR), amino (&#x2014;NRR), heterocyclic amino (&#x2014;NRRas part of a heterocyclic structure), imino (&#x2550;N&#x2014;Ror &#x2014;N&#x2550;R), heterocyclic imino (&#x2550;N&#x2014;Ror &#x2014;N&#x2550;Ras part of a heterocyclic structure), phosphonate (&#x2014;P(=0)(OR)(OR)), phosphate (-0-P(=0)(OR)(OR)), phosphonic acid (&#x2014;P(=0)(OH)), phosphoric acid (-0-P(=0)(OH)) moiety, or their protonated or deprotonated forms, R, R, R, Ris&#x2014;independently from each other&#x2014;alkyl, aryl, alkylaryl, or arylalkyl, R, R, R, R, Ris&#x2014;independently from each other&#x2014;H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkylene, or arylalkylene, R, R, Ris&#x2014;independently from each other&#x2014;H, alkyl, aryl, alkylaryl, or arylalkyl, and R, R, Rdoes not comprise any moiety (Z), Ris alkyl, aryl, alkylaryl, or arylalkyl, and Rdoes not comprise any moiety (Z), and (D) an aqueous medium.

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Ludwigshafen, Germany

Bettina Drescher