Average Co-Inventor Count = 3.54
ph-index = 6
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Micron Technology Incorporated (27 from 37,905 patents)
2. Sony Corporation (1 from 58,129 patents)
3. Sony Semiconductor Solutions Corporation (1 from 2,856 patents)
29 patents:
1. 12336185 - Memory device assembly with non-impinged leaker devices
2. 12167610 - Semiconductor devices including ferroelectric materials
3. 11935574 - Memory cells and methods of forming a capacitor including current leakage paths having different total resistances
4. 11711924 - Methods of forming structures containing leaker-devices and memory configurations incorporating leaker-devices
5. 11676768 - Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices
6. 11600691 - Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
7. 11404217 - Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices
8. 11315939 - Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices
9. 11170834 - Memory cells and methods of forming a capacitor including current leakage paths having different total resistances
10. 11043502 - Semiconductor devices including ferroelectric materials
11. 10903218 - Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices
12. 10879344 - Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
13. 10833092 - Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices
14. 10680057 - Methods of forming a capacitor comprising ferroelectric material and including current leakage paths having different total resistances
15. 10650978 - Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb