Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Commissariat a L'energie Atomique Et Aux Energies

Bertrand Szelag

Karim Hassan

Laetitia Adelmini

Daivid Fowler

Quentin Wilmart

Fabrice Nemouchi

Sylvie Menezo

Jean-Michel Hartmann

Christophe Kopp

Yohan Desieres

Corrado Sciancalepore

Philippe Rodriguez

David Bitauld

Elodie Ghegin

Sylvain Guerber

Christophe Jany

Leopold Virot

Stephane Brision

Joan Ramirez

Stéphane Brision

The invention relates to a process for fabricating a semiconductor diode () via transfer of a semiconductor stack () then local etching to form a semiconductor pad (), the production of the semiconductor pad () comprising a plurality of sequences comprising a dry etch that leaves a residual segment (), formation of a hard-mask spacer (), then a wet etch of the residual segment ().

Process for fabricating a semiconductor diode via wet and dry etches

A process for fabricating an optoelectronic system having an optical device coupled to an integrated photonic circuit includes producing a lower waveguide from the thin single-crystal-silicon layer of a first SOI substrate, then joining a second SOI substrate thereto and producing an intermediate waveguide from the thin single-crystal-silicon layer of the second SOI substrate.

Process for fabricating a photonics-on-silicon optoelectronic system comprising an optical device coupled to an integrated photonic circuit

The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

Method for fabricating a photonic chip

A photonic chip including an optical coupler capable of transferring an optical signal between a first waveguide made of III-V material and a second waveguide made of silicon, this optical coupler including a first extension made of III-V material which extends the core of the first waveguide, a second extension made of silicon which extends the core of the second waveguide, and a SiGe inclusion buried inside of the second extension, this inclusion being made of SiGe whose chemical formula is SiGe, where x is in the range between 0.2 and 0.5, and being optically coupled, on a first side, to the first waveguide and, on a second opposite side, to the second waveguide.

Photonic chip

A laser source includes a semiconductor pad containing an active waveguide arranged on a functionalized substrate having an integrated waveguide. The integrated waveguide is formed from a stack of a first portion and of a second portion. A Bragg grating is arranged in the first portion and is covered by the second portion.

Hybrid laser source comprising an integrated waveguide containing an intermediate Bragg grating

A photonic device manufacturing method, including a step of transfer, onto a same surface of a photonic circuit previously formed inside and on top of a first substrate, of at least a first die made up of a III-V semiconductor material and of at least a second die made up of silicon nitride, the method further including a step of forming of photonic components in said at least one first and at least one second dies.

Integrated photonic device manufacturing method

The invention relates to a device for coupling a flared laser source () and an output waveguide (), comprising a coupler (), a combiner (), and a network of intermediate waveguides () located between the coupler and the combiner and comprising a correcting central section (S) in which an effective index associated with the guided modes is adjusted so that the optical paths of the intermediate waveguides () between the coupler () and the combiner () are identical to one another.

Integrated device for optically coupling a flared laser source and a waveguide

The invention relates to a process for fabricating a photonic chip including steps of transferring a die to an actual transfer region of the receiving substrate comprising a central region entirely covered by the die and a peripheral region having a free surface, a first waveguide lying solely in the central region, and a second waveguide lying in the peripheral region; depositing an etch mask on a segment of the die and around the actual transfer region; and dry etching a free segment of the die, the free surface of the peripheral region then being partially etched.

Process for fabricating a photonic chip via transfer of a die to a receiving substrate

The invention relates to a method of fabrication of a photonic chipcomprising an avalanche photodiodeof the SACM type optically coupled to an integrated waveguide, comprising a step for forming a first spacerallowing a constant peripheral recessing drof the charge regionto be defined later on with respect to an edge of the multiplication portion, then a step for forming a second spacerallowing a constant peripheral recessing drof the absorption portionto be defined later on with respect to an edge of the charge region

Method of fabrication of a photonic chip comprising an SACM-APD photodiode optically coupled to an integrated waveguide

A process for producing a component includes a structure made of III-V material(s) on the surface of a substrate, the structure comprising at least one upper contact level defined on the surface of a first III-V material and a lower contact level defined on the surface of a second III-V material, comprising: successive operations of encapsulation of the structure with at least one dielectric; making primary apertures in a dielectric for the two contacts; making secondary apertures in a dielectric for the two contacts; at least partial filling of the apertures with at least one metallic material so as to produce upper contact bottom metallization and at least one upper contact pad in contact with the metallization for each of said contacts. A component produced by the process is also provided. The component may be a laser diode.

Process for producing a component comprising III-V materials and contacts compatible with silicon process flows

A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 &#x3bc;m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.

Photonic transmitter

This method for manufacturing a germanium slow light waveguide includes:

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Grenoble, France

Bertrand Szelag