Gemplus

Other

Stmicroelectronics S.a.

Bertrand Gomez

Stephane Rayon

Pascal Cooreman

Pierre Rizzo

Francis Dell'Ova

Frank Lhermet

Nicole Lessoile

Dominique Poirot

A method is provided for manufacturing an integrated electronic component arranged on a substrate wafer. According to the method, at least one metallization step is performed, and a value of an electrical parameter of the integrated electronic component is determined after the at least one metallization step. A subsequent metallization step is performed after determining the value of the electrical parameter. The subsequent metallization step is performed using an adjustment mask chosen from n predefined masks based on a desired value of the electrical parameter, so as to obtain the desired value of the electrical parameter of the integrated electronic component after manufacturing. In one preferred embodiment, a series of electrical tests is performed on the wafer using test equipment, and the value of the electrical parameter is determined using the same test equipment as is used to perform the series of electrical tests.

Method for adjusting an electrical parameter on an integrated electronic component

The invention relates to cards with a microprocessor and contacts. The invention lies in the fact that a communication device of the asynchronous type is disposed between the contacts and the microprocessor so as to relieve the microprocessor of the communication tasks and thus allow better use of the central unit of the microprocessor and the associated memories. This device includes an analysis circuit, a circuit for checking the integrity of the series of pulses, a circuit for determining the characters in the series of pulses and pluralities of registers which are connected with the microprocessor.

Microprocessor card including a hard-wired communication circuit

A load modulation device in a remotely powered integrated circuit includes an oscillating circuit, and a voltage device for regenerating first and second power supply voltages. The voltage device includes at least one MOS transistor in a well on at least one terminal of the oscillating circuit. The at least MOS transistor includes a source or drain connected to the at least one terminal. A bias circuit biases the well to the first or second power supply voltage based upon a modulation signal.

Load modulation device in a remotely powered integration circuit

A memory card fitted with contacts contains a memory and its access circuits. The memory access circuits are modified to allow recording or reading the memory via electric signals supplied by a terminal according to an asynchronous-type communication protocol with integrity check of the codes transmitted. The signals received on the contacts are analysed by an analysis circuit, then switched to address and data registers by a switch circuit. The analysis circuit and a control circuit transmit messages and codes to the terminal via a transmission circuit.

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Roquevaire, France

Bertrand Gomez