Nukem Limited

Schott Solar Ag

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Merck Patent Gmbh

Merck Patent Gesellschaft

Csem Centre Suisse D'electronique Et De Microtechnique Sa&#x2014;recherche Et D&#xe9;veloppement

Angewandte Solarenergie-ase Gmbh

Berthold Schum

Wilfried Schmidt

Agata Lachowicz

Werner Stockum

Sylke Klein

Armin Kübelbeck

Knut Vaas

Hilmar Von Campe

Ingo Schwirtlich

Andreas Teppe

Rudolf Hezel

Dieter Franke

Gabriele Blendin

Fritz Heyer

Joerg Horzel

Heinrich Blanke

Gernot Wandel

Dietmar Liedtke

WoJorg

Winfried Hoffmann

A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.

Method for the wet-chemical etching back of a solar cell emitter

A process for edge isolation or texture smoothing of a substrate, in which a process medium which allows control treatment of limited regions of the substrate is used. The process is therefore particularly suitable for one-sided treatment of substrates. The viscosity of the process medium plays a central role here. Furthermore, an apparatus designed for the process is presented.

Alkaline pickling process

A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates SiPand SiPOare removed.

Method for forming a dopant profile

A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.

Method for chemically treating a substrate

The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a process in which these media are employed.

Combined etching and doping media

The invention concerns etching and doping substances free of hydrochloric/fluoride acid used for etching inorganic layers as well as for doping subjacent layers. The invention also concerns a method wherein said substances are used.

Combined etching and doping substances

A process and device for treating sheet objects, especially fragile sheet objects, by rotation through a liquid bath. The objects are disposed in radial slots in a rotating disk, retained therein by a flexible element moving synchronously with the disk, and by a retaining element mounted adjacent the disk and spaced therefrom along its axis of rotation.

Process and device for treatment of sheet objects in a liquid bath

A method and a device are proposed for formation of a layer on a surface of a substrate by plasma-chemical process, where the surface is aligned parallel to the electrical field required for the plasma-chemical process. In addition, the gas required therefor flows directly onto the surface.

Method and device for forming a layer by plasma-chemical process

A method is proposed for re-using silicon base material of defective MIS inversion-layer solar cells, where at least MIS solar cell-specific layers are stripped off and replaced by corresponding new layers.

Method for re-using silicon base material of a metal insulator

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Biebergemünd, Germany

Berthold Schum