Precitec Optronik Gmbh

Dusemund Pte. Ltd.

Berthold Michelt

Martin Schönleber

Matthias Kunkel

Christoph Dietz

Martin Schoenleber

Claus Dusemund

The invention relates to an optical measuring process for acquiring a surface topography of a measurement object. To this end, a measuring device with a measuring head in a measuring head guide device is provided for chromatic confocal acquisition of the surface topography or for spectral interferometric OCT acquisition of the distance to the surface topography. Firstly, spectrally broadband light of a light source from a fibre array with i fibres of i measurement spots is directed onto the measurement object via a common measuring head optic, with formation of a spot array of i measurement spots. i reflection spectra of the i measurement channels are then acquired and digitized. Finally, the digitized reflection spectra are evaluated with removal of time variations of systematic measurement errors and time-related deviation movements of the measuring head guide device.

Optical measuring method and measuring device having a measuring head for capturing a surface topography by calibrating the orientation of the measuring head

The invention relates to an optical measuring process for acquiring a surface topography of a measurement object. To this end, a measuring device with a measuring head in a measuring head guide device is provided for chromatic confocal acquisition of the surface topography or for spectral interferometric OCT acquisition of the distance to the surface topography. Firstly, spectrally broadband light of a light source from a fiber array with i fibers of i measurement spots is directed onto the measurement object via a common measuring head optic, with formation of a spot array of i measurement spots. i reflection spectra of the i measurement channels are then acquired and digitized. Finally, the digitized reflection spectra are evaluated with removal of time variations of systematic measurement errors and time-related deviation movements of the measuring head guide device.

The invention relates to an optical measuring device for acquiring in situ a difference in distance between a support and an edge region of an object to be measured. The optical measuring device has a measuring head with dual beam guide which directs a first measuring beam towards the support and a second measuring beam towards the edge region of the object to be measured. Means are provided for acquiring and forming reflection spectra of the first measuring beam which is directed towards the support and the second measuring beam which is directed towards the edge region of the object to be measured. The measuring device has a multi-channel measuring apparatus with one spectrometer line. An evaluation unit for the reflection spectra for acquiring the stage height between the support and the edge region of the object works together with a spectrometer and a display unit.

Optical measuring device and method for acquiring in situ a stage height between a support and an edge region of an object

The invention relates to a test device for testing a bonding layer between wafer-shaped samples and a test process for testing the bonding layer. The test device comprises a measuring head for an OCT process that is configured to direct an optical measuring beam at a composite comprising at least two wafer-shaped samples with a bonding layer positioned between them. An optical beam splitter is configured to divert an optical reference beam as a reference arm for distance measurements. An evaluation unit is configured to evaluate layer thickness measurements without a reference arm and distance measurements with a reference arm. An optical switch device is configured to connect and disconnect the reference arm.

Test device for testing a bonding layer between wafer-shaped samples and test process for testing the bonding layer

According to the invention, a monitoring device () is created for monitoring a thinning of at least one semiconductor wafer () in a wet etching unit (), wherein the monitoring device () comprises a light source (), which is designed to emit coherent light of a light wave band for which the semiconductor wafer () is optically transparent. The monitoring device () further comprises a measuring head (), which is arranged contact-free with respect to a surface of the semiconductor wafer () to be etched, wherein the measuring head () is designed to irradiate the semiconductor wafer () with the coherent light of the light wave band and to receive radiation () reflected by the semiconductor wafer (). Moreover, the monitoring device () comprises a spectrometer () and a beam splitter, via which the coherent light of the light wave band is directed to the measuring head () and the reflected radiation is directed to the spectrometer (). The monitoring device () further comprises an evaluation unit (), wherein the evaluation unit () is designed to determine a thickness d(t) of the semiconductor wafer () from the radiation () reflected by the semiconductor wafer () during thinning of the semiconductor wafer () by means of a method that is selected from the group consisting of a 1D-se FDOCT method, a 1D-te FDOCT method and a 1D-se TDOCT method.

Monitoring apparatus and method for in-situ measurement of wafer thicknesses for monitoring the thinning of semiconductor wafers and thinning apparatus comprising a wet etching apparatus and a monitoring apparatus

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Wiesbaden, Germany

Berthold Michelt