Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Osram Oled Gmbh

Osram Ag

Ams-Osram International Gmbh

Osram Opto Semiconductros Gmbh

Berthold Hahn

Volker Härle

Dominik Eisert

Johannes Baur

Stefan Bader

Stephan Kaiser

Michael Fehrer

Hans-Jürgen Lugauer

Siegfried Herrmann

Uwe Strauss

Karl Engl

Ulrich Zehnder

Andreas Ploessl

Joachim Hertkorn

Andreas Weimar

Korbinian Perzlmaier

Christian Leirer

Frank Singer

Alfred Lell

Georg Bogner

Alexander F Pfeuffer

Martin Rudolf Behringer

Tobias Meyer

Stefan Illek

Erwin Lang

Tansen Varghese

Marc Philippens

Andreas Biebersdorf

Petrus Sundgren

Franz Eberhard

Sebastian Wittmann

Matthias Sabathil

Jörg Erich Sorg

Tony Albrecht

Reiner Windisch

Stefan Groetsch

Martin Strassburg

Klaus Streubel

Isabel Otto

Thomas Schwarz

Ralph Wirth

Herbert Brunner

Stefan Grötsch

Markus Heinrich Klein

Günter Waitl

Markus Maute

Alexander Frey

Ewald Karl Michael Guenther

Gertrud Kräuter

Johannes Völkl

Volker Haerle

Manfred Mundbrod-Vangerow

Ulrich Jacob

Wilhelm Stein

Andreas Plössl

Stefan Gruber

Peter Stauss

Tetsuya Taki

Bruno Jentzsch

Jens Mueller

Anna Kasprzak-Zablocka

Nikolaus Gmeinwieser

Kerstin Neveling

Julia Stolz

Christian Mueller

Werner Plass

Ruth Boss

Helmut Bolay

Lorenzo Zini

Andreas Weimer

Markus Richter

Matthias Goldbach

Johann Luft

Harald Jäger

Raimund Oberschmid

Frank Otte

Magnus Ahlstedt

Matthias Winter

Marianne Ortmann

Joerg Sorg

Simeon Katz

Roland Zeisel

Kirstin Petersen

Andreas Plößl

Dieter Eissler

Georg Brüderl

Vincent Grolier

Andreas Leber

Jörg Strauss

Holger Klassen

Hans-Juergen Lugauer

Richard Floeter

Andreas Pl&ouml;ssl

Wolfgang Schnabel

Glenn-Ives Plaine

Andreas Hangleiter

Georg Bruederl

Markus Klein

Glenn-Yves Plaine

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

An optoelectronic device includes a glass carrier, at least one light-scattering layer applied to the glass carrier, and at least one surface-emitting component in a chip size package with an emission surface and a surface facing away from the emission surface having a first and a second contact pad. The emission surface is arranged on the at least one light-scattering layer by way of an adhesive. At least one contact line contacts the second contact pad of the at least one surface-emitting component and extends along a side surface of the at least one surface-emitting component adjacent to the second contact pad in a direction of the glass carrier. A light-shaping structure is arranged on a surface of the glass carrier facing away from the surface-emitting component.

Optoelectronic device with glass carrier and method of manufacture

A semiconductor component includes a radiation exit surface; a semiconductor body having an active region that generates radiation; wherein a molded body molded onto the semiconductor body; contacts for external electrical contacting of the semiconductor component are accessible on an outer side of the molded body; a deflection structure arranged between the active region and the radiation exit surface; a planarization layer arranged on the deflection structure; and a polarizer arranged on a side of the planarization layer facing away from the semiconductor body; wherein the semiconductor body on a side facing away from the radiation exit surface includes a mirror structure having at least one dielectric layer and a metallic connection layer, and the dielectric layer is arranged at locations between the semiconductor body and the metallic connection layer.

Semiconductor component, device having a semiconductor component and method of producing semiconductor components

μ-LED, μ-LED device, display and method for the same

An optoelectronic component that emits electromagnetic radiation from a radiation exit surface of the optoelectronic component includes a radiation-emitting semiconductor chip that produces electromagnetic radiation, and a marker element applied to the radiation exit surface of the optoelectronic component, the marker element including a dye substance that can be removed from the radiation exit surface using a solvent and/or is permeable to the electromagnetic radiation of the optoelectronic component, wherein the dye substance includes a resin into which fluorescent particles are introduced that convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, the first wavelength range and the second wavelength range being within the ultraviolet spectral range.

Optoelectronic component and method of producing an optoelectronic component

A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.

Semiconductor component comprising a deformation layer and method for producing a semiconductor component comprising a deformation layer

A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.

Radiation-emitting semiconductor device and fabric

The invention relates to an optoelectronic component () comprising a semiconductor layer sequence () having an active layer (), wherein the active layer () is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component () comprises a first contact structure () and a second structure (), by means of which the semiconductor layer sequence () can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (), wherein an operation-related voltage difference &#x394;Ubet between the contact structures () arises. When the voltage difference is increased, a first arc-over occurs in or on the component () between the two contact structures (). A spark gap () between the contact structures (), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting. The first arc-over occurs at a voltage difference of 2&#xb7;&#x394;Ubet at the earliest.

Optoelectronic component with ESD protection

A component includes a carrier having a front side facing towards a semiconductor body and a rear side facing away from the semiconductor body, each of which is formed at least in places by a surface of a shaped body, a metal layer contains a first sub-region and a second sub-region, wherein the first sub-region and the second sub-region adjoin the shaped body in a lateral direction, are electrically connectable in a vertical direction on the front side of the carrier, are assigned to different electrical polarities of the component and are thus configured to electrically contact the semiconductor body, and the carrier has a side face running perpendicularly or obliquely to the rear side of the carrier and is configured as a mounting surface of the component, wherein at least one of the sub-regions is electrically connectable via the side face and exhibits singulation traces.

Component and method of producing components

A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.

Method of producing optoelectronic semiconductor chips

Described is an optoelectronic semiconductor chip () with a built-in bridging element (A) for overvoltage protection.

Optoelectronic semiconductor chip with built-in ESD protection

A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

Composite substrate, semiconductor chip having a composite substrate and method for producing composite substrates and semiconductor chips

An optoelectronics semiconductor chip has a substrate and a semiconductor body arranged on the substrate and has a semiconductor layer sequence. The semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and is provided to generate or to receive radiation. The first semiconductor layer is electrically conductively connected to a first contact and to a second contact. The first contact is formed on a front side of the substrate, facing the semiconductor body. The second contact is formed on a rear side of the substrate, facing away from the semiconductor body. The first contact and the second contact are electrically conductively connected to each other.

Optoelectronic semiconductor chip and optoelectronic module

An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

Optoelectronic semiconductor chip and optoelectronic component

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Hemau, Germany

Berthold Hahn