Asml Netherlands B.v.

Bert Verstraeten

Hugo Augustinus Joseph Cramer

Thomas Theeuwes

Anagnostis Tsiatmas

Alok Verma

Mariya Vyacheslavivna Medvedyeva

Frank Staals

Anton Bernhard Van Oosten

Carlo Cornelis Maria Luijten

Bastiaan Onne Fagginger Auer

Maria Isabel De La Fuente Valentin

Johan Maria Van Boxmeer

Jan-Willem Gemmink

Martinus Hubertus Maria Van Weert

Yasri Yudhistira

Satej Subhash Khedekar

Bastiaan Onne Fagginer Auer

Xiaoxin Shang

A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.

Method for process metrology

Methods for processing data from a metrology process and for obtaining calibration data are disclosed. In one arrangement, measurement data is obtained from a metrology process. The metrology process includes illuminating a target on a substrate with measurement radiation and detecting radiation redirected by the target. The measurement data includes at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method further includes analyzing the at least a component of the detected pupil representation to determine either or both of a position property and a focus property of a radiation spot of the measurement radiation relative to the target.

Method of processing data, method of obtaining calibration data

Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features () interleaved with second features () A minimum dimension (w) of each first feature is close to a printing resolution. A maximum dimension (w) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w') and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features () arranged in pairs.

Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method

A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

Substrate, metrology apparatus and associated methods for a lithographic process

A method of measuring a parameter of a device manufacturing process is disclosed. The method includes measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target has a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation includes at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.

Method of measuring a parameter of a device manufacturing process, metrology apparatus, substrate, target, device manufacturing system, and device manufacturing method

Methods of determining an optimal focus height are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a target are obtained. Each application of the metrology process includes illuminating the target with a radiation spot and detecting radiation redirected by the target. The applications of the metrology process include applications at different nominal focus heights. The measurement data includes, for each application of the metrology process, at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal focus height for the metrology process using the obtained measurement data.

Method of determining an optimal focus height for a metrology apparatus

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Lommel, Belgium

Bert Verstraeten