International Business Machines Corporation

Bert Jan Offrein

Folkert Horst

Antonio La Porta

Roger F Dangel

Stefano Sergio Oggioni

Laurent A Dellmann

Ibrahim Murat Soganci

Daniel S Jubin

Michel Despont

Jonas R Weiss

Gian-Luca Bona

Lukas Czornomaz

Stefan Abel

Jens Hofrichter

Roland Germann

Tobias Lamprecht

Dorothea W Wiesmann

Jean Fompeyrine

Huub L Salemink

Norbert M Meier

David J Webb

Charles Caër

Mauro Spreafico

Mirja Richter

Peter Bloechl

Pascal Stark

Valeria Bragaglia

Charles Jean Ghislain Caer

Casimer M DeCusatis

Russell Alan Budd

Thomas J Brunschwiler

Walter Heinrich Riess

Ingmar G Meijer

Gian R Salis

Lorenz K Muller

Christoph Berger

Urs H Bapst

Ingmar Meijer

Huub Salemink

Gian Luca Bona

Horst Folkert

Illana Massarek

Ilana Massarek

Tonnis M Koster

A method of processing data and related apparatuses. The method relies on an optical finite impulse response (FIR) filter. This optical FIR filter comprises several delay stages having weights set in accordance with parameters of a transformation to be applied by the optical FIR filter. Each of the delay stages is configured to impose a delay matched to a given input data period corresponding to a given input sample rate. According to the method, an optical signal is coupled into the optical FIR filter. The optical signal carries a data stream of input samples encoded at the given input sample rate; the data stream represents the data to be processed. Next, output samples are collected from an output data stream carried by an output optical signal obtained in output of the optical FIR filter. A set of output samples are obtained, which are representative of processed data.

Convolutions with optical finite impulse response filters

An electrical memristive device has a layer structure. The layer structure comprises two electrodes and a bilayer material arrangement that connects the two electrodes. The bilayer material arrangement may, for example, be sandwiched by the two electrodes, in direct contact therewith. The bilayer material arrangement includes an HfOlayer, where 1.3±0.1≤y<1.9±0.1, as well as a WOlayer in direct contact with the HfOlayer, where 2.5±0.1≤x<2.9±0.1. The bilayer arrangement involves sub-stoichiometric layers of HfOand WO, where the WOlayer may advantageously have a polycrystalline structure in the monoclinic phase, while the HfOlayer is preferably amorphous.

Electrical memristive devices based on bilayer arrangements of HfOand WO

Embodiments of the present invention provide a computer system, a voltage resistance controlling apparatus, and a method that comprises at least two electrodes on proximal endpoints; a first layer disposed on the at least two electrodes, wherein the first layer is a made of a metal-oxide; a second layer disposed on the second layer, wherein the second first layer is made of an electrically conductive metal-oxide; a forming contact disposed on the second layer, wherein a combination of the forming contact disposed on the first layer disposed on the second layer operatively connects the at least two electrodes; and a computer system operatively connected to the forming contact, wherein the computer system is configured to apply a predetermined voltage to the first layer and the second layer respectively and display an overall resistance increase using a user interface.

Controlling voltage resistance through metal-oxide device

An optical synapse comprises a memristive device for non-volatile storage of a synaptic weight dependent on resistance of the device, and an optical modulator for volatile modulation of optical transmission in a waveguide. The memristive device and optical modulator are connected in control circuitry which is operable, in a write mode, to supply a programming signal to the memristive device to program the synaptic weight and, in a read mode, to supply an electrical signal, dependent on the synaptic weight, to the optical modulator whereby the optical transmission is controlled in a volatile manner in dependence on programmed synaptic weight.

Optical synapses

A method, system, and computer program product for using photorefractive material for analog optic storage and other applications of optical neuromorphic systems. The method may include coupling electromagnetic radiation into a first optical input and a second optical input, where the first optical input and the second optical input are part of an integrated optical device, the integrated optical device including: a first optical mode coupler connected to a first pair of optical ports including a first optical input and output; a second optical mode coupler connected to a second pair of optical ports including a second optical input and output, and the first optical mode coupler connected to the second optical mode coupler using a pair of arms (including a photorefractive material). The method may also include obtaining an optical interference pattern in the photorefractive material of each arm of the integrated optical device.

Analog optic memory and signal processing

Embodiments are directed to the fabrication of an electro-optical device. The device comprises the forming of an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises selectively re-growing two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices.

Method of forming an electro-optical device with lateral current injection regions

Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

Electro-optical device with lateral current injection regions

System and method related to photonic computing are provided. A photonic computing system may include an optical interference region and an input waveguide configured to couple an optical input signal to the optical interference region and to create an optical interference pattern in the optical interference region. The interference pattern has an optical power distribution. The photonic computing system may further include a readout unit that is arranged in an inner area of the optical interference region. The readout unit is configured to detect an optical readout signal of the optical power distribution at a readout position of the inner area of the optical interference region. A method is also provided for performing photonic computing.

Optical computing system

Embodiments include a silicon photonic chip having a substrate, an optical waveguide on a surface of the substrate and a cavity. The cavity includes an electro-optical component, configured for emitting light perpendicular to said surface and a lens element arranged on top of the electro-optical component. The lens is configured for collimating light emitted by the electro-optical component. The chip also includes a deflector arranged on top of the lens element and configured for deflecting light collimated through the latter toward the optical waveguide. The lens element includes electrical conductors connected to the electro-optical component. The electrical conductors of the lens element may for instance include one or more through vias, one or more bottom electrical lines on a bottom side of the lens element (facing the electro-optical component), and at least one top electrical line.

Method of fabricating a silicon photonic chip with integrated electro-optical component and lens element

A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Semiconductor structure and method for manufacturing a semiconductor structure

A chip packaging includes a first part comprising a support; and a core polymer layer transversally structured so as to exhibit distinct residual portions comprising: first waveguide cores each having a first height and disposed within said inner region; and one or more first alignment structures disposed within said outer region. A second part of the packaging comprises: second waveguide cores, each having a same second height; and one or more second alignment structures complementarily shaped with respect to the one or more first alignment structures, and wherein, the first part structured such that said inner region is recessed with respect to the outer region, to enable: the second waveguide cores to contact the first waveguide cores; and the one or more second alignment structures to respectively receive, at least partly, the one or more first alignment structures. The invention is further directed to related passive alignment methods.

Passive alignment of polymer waveguides

Silicon photonic chip with integrated electro-optical component and lens element

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Schoenenberg, Switzerland

Bert Jan Offrein