Mapper Lithography IP B.v.

Asml Netherlands B.v.

Bert Jan Kampherbeek

Pieter Kruit

Alexander Hendrik Vincent Van Veen

Marco Jan-Jaco Wieland

Marco Jan Jaco Wieland

Stijn Willem Herman Karel Steenbrink

Alexander Hendrik Van Veen

Marco Wieland

Stijn Willem Steenbrink

Alexander Van Veen

The invention relates to a charged particle optical system comprising a beamlet generator for generating a plurality of charged particle beamlets, an electrostatic deflection system for deflecting the beamlets, and a projection lens system for directing the beamlets from the beamlet generator towards the target. The electrostatic deflection system comprises a first electrostatic deflector and a second electrostatic deflector for scanning charged particle beamlets over the target. The second electrostatic deflector is located behind the first electrostatic deflector so that, during operation of the system, a beamlet generated by the beamlet generator passes both of the electrostatic deflectors. During operation of the first and second electrostatic deflectors the system is adapted to apply voltages on the first electrostatic deflector and the second electrostatic deflector of opposite sign.

Projection lens arrangement

A projection lens arrangement for a charged particle multi-beamlet system, the projection lens arrangement including one or more plates and one or more arrays of projection lenses. Each plate has an array of apertures formed in it, with projection lenses formed at the locations of the apertures. The arrays of projection lenses form an array of projection lens systems, each projection lens system comprising one or more of the projection lenses formed at corresponding points of the one or more arrays of projection lenses.

The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising:

Electron beam exposure system

A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets.

A lithography system comprising a converter element () for receiving light and converting said light in a plurality of electron beams () to be directed towards and focused on a substrate () to be processed, said plurality of electron beams () being used to define a pattern in a resist layer () on said substrate (), wherein said lithography system is provided with a protective foil with holes at the positions of the electron beams () being arranged to protect, in use, said converter element () from contamination with material from the resist layer ().

Growing community of inventors

Delft, Netherlands

Bert Jan Kampherbeek