International Business Machines Corporation

Bernie Roque, Jr

Steven M Shank

James Spiros Nakos

Jay Sanford Burnham

James J Quinlivan

Beth A Ward

A method of fabricating a gate dielectric layer. The method includes: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.

Method for fabricating a nitrided silicon-oxide gate dielectric

A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.

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Williston, VT, United States of America

Bernie Roque, Jr