Infineon Technologies Ag

Robert Boschgmbh

Infineon Technologies Austria Ag

Texas Instruments Corporation

Bernhard Wicht

Karl Norling

Johannes Groeger

Anton Mauder

Steffen Paul

Thoralf Rosahl

Steffen Ritzmann

Samuel Quenzer-Hohmuth

Thomas Nirschl

Doris Schmitt-Landsiedel

Michael Lueders

Markus Zannoth

Yannick Martelloni

Jean-Yves Larguier

Maik Peter Kaufmann

Tobias Funk

Juergen Wittmann

Alexis Schindler

Alexander Schreiber

Johannes Gröger

A digital closed loop control system. An output signal is detected with the aid of an analog-to-digital converter. A correction value is subtracted from the output signal prior to the analog-to-digital conversion and this correction value is added up again after the analog-to-digital conversion. The correction value in this case may be dynamically adapted. In this way, the analog-to-digital converter may be operated in a narrow conversion range.

Control device, switching converter and method for controlling an output variable

Reference voltage generation circuits and related methods are disclosed. An example reference voltage generation circuit includes a voltage generating circuit including an enhancement mode (E-mode) gallium nitride (GaN) transistor, the voltage generating circuit to, in response to a first clock signal having a first phase, generate a first voltage associated with the E-mode GaN transistor, and, in response to a second clock signal having a second phase different from the first phase, generate a second voltage associated with the E-mode GaN transistor, and a switching capacitor circuit coupled to the voltage generating circuit, the switching capacitor circuit to generate a reference voltage based on a difference between the first voltage and the second voltage.

Reference voltage generation circuits and related methods

A method for protecting a power switch during turn-on includes sensing that a change in current through the power switch is in regulation, measuring a time the change in current through the power switch is in regulation, and comparing the time the change in current through the power switch is in regulation to a reference time. An over current signal, which can be used to disable the power switch, is generated if the time the change in current through the power switch is in excess of the reference time.

Method of over current and over voltage protection of a power switch in combination with regulated DI/DT and DV/DT

A method for protecting a power switch during turn-on includes sensing that a change in current through the power switch is in regulation, measuring a time that the change in current through the power switch is in regulation, and comparing the time that the change in current through the power switch is in regulation to a reference time. An over current signal, which can be used to disable the power switch, is generated if the time that the change in current through the power switch is in excess of the reference time.

In accordance with an embodiment, a method of driving a switching transistor includes driving the switching transistor with a gate drive signal; measuring at least one of a derivative of a load path voltage and a derivative of a load path current of the switching transistor; measuring a derivative of the gate drive signal; forming an error signal based on a reference signal, a measured derivative of the gate drive signal, and at least one of the measured derivative of the load path voltage of the switching transistor or the measured derivative of the load path current of the switching transistor; and forming the gate drive signal, where forming the gate drive signal includes processing the error signal using a dynamic controller.

System and method of driving a power switch in combination with regulated DI/DT and/or DV/DT

A method for optimizing the operation of a digital controller provided in a control loop for a step-up converter. The method includes: evaluating at least one output variable of the digital controller during operation of the step-up converter; estimating the instantaneous load resistance value in the path of the control loop based on the at least one evaluated output variable; setting at least one controller coefficient of the digital controller based on the estimated instantaneous load resistance value during operation of the step-up converter. A change in the setting of the at least one controller coefficient results in a change in the transition frequency in the control loop. Furthermore, a control loop for a step-up converter that includes a digital controller is provided, which is configured to carry out the steps of the method. A computer program product that includes computer-executable program code for carrying out the method.

Method for optimizing the operation of a digital controller provided in a control loop for a step-up converter, a control loop, and a computer program product

A device including a first and second monitoring unit, the first monitoring unit detecting a first voltage potential and the second monitoring unit detecting a second voltage potential, the monitoring units comparing the first voltage potential and the second voltage potential to the value of the supply voltage and activate a control unit as a function of the comparisons, the control unit determining a switching point in time of a second power transistor, and an arrangement being present which generates current when the second power transistor is being switched on, the current changing the first voltage potential, and the control unit activates a first power transistor when the first voltage potential has the same value as the supply voltage, so that the first power transistor is de-energized.

Device and method for reducing switching losses in power transistors

Disclosed is an electronic drive circuit and a drive method. The drive circuit includes an output; a first output transistor comprising a control node and a load path, wherein the load path is coupled between the output and a first supply node; a voltage regulator configured to control a voltage across the load path of the first output transistor; and a first driver configured to drive the first output transistor based on a first control signal.

Electronic drive circuit and method

An SRAM memory cell has at least one memory node and at least one selection transistor, which is electrically connected to the memory node, a first bit line and a first word line. Furthermore, the SRAM memory cell has means for compensating for a leakage current flowing into the SRAM memory cell. The means are designed in such a way that a current corresponding to the leakage current flows into the SRAM memory cell. In one exemplary embodiment, the means are formed as a transistor which is electrically connected to the first bit line and the second memory node, the first memory node being connected to the selection transistor.

SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cell

A differential current evaluation circuit has a differential amplifier and a circuit for setting an input resistance of the current evaluation circuit. The circuit is connected to the outputs and the inputs of the differential amplifier and to signal lines. A sense amplifier circuit has a circuit section, in which a signal is available at an output in a temporally continuous manner even if, after the deactivation of the circuit connected upstream, a signal, in particular a signal supplied by the current evaluation circuit, is no longer present at its input. The differential current evaluation circuit and the sense amplifier circuit are disposed in a circuit configuration for reading out and evaluating a memory state of a semiconductor memory cell. The current evaluation circuit can be activated by a circuit section for automatic deactivation before a read operation and be automatically deactivated directly after the read operation has ended.

Differential current evaluation circuit and sense amplifier circuit for evaluating a memory state of an SRAM semiconductor memory cell

An electronic amplifier circuit according to the principle of current detection is coupled to a memory cell field and has an input transistor for each respective row or column of the matrix array. The input transistor is connected to the respective row or column and can be driven and switched by a control signal of a multiplexer circuit. The amplifier circuit may be constructed as a gate circuit or as a transistor diode circuit. A matrix array of memory cells and a matrix array of photodetectors are also provided.

Electronics amplifier circuit having a switchable input transistor, matrix array of memory cells and matrix array of photodetectors

An amplifier circuit configuration includes a data line for transmitting a data signal. The data line is connected to a data signal input of an amplifier by way of a switching device. The amplifier includes a control circuit for controlling an input resistance of the amplifier with a terminal for a control signal. The terminal for the control signal of the control circuit is connected, parallel to the switching device, to the data line. As a consequence, a switching device, which is connected between the data line and the amplifier, has only little influence on the dynamic response when reading out a data signal.

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Reutlingen, Germany

Bernhard Wicht