Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Christian-albrechts-universitaet Zu Kiel

Christian-albrechts-universitat Zu Kiel

Bernhard Wagner

Wolfgang Benecke

Rolf Hagedorn

Thomas Lisec

Gunter Fuhr

Fabian Lofink

Fabian Stoppel

Jan Gimsa

Roland Glaser

Simon Fichtner

Steffen Chemnitz

Shanshan Gu-Stoppel

Uwe Schnakenberg

Malte Florian Niekiel

Dirk Kaden

Werner Riethmuller

An apparatus includes a substrate having a recess and a multitude of particles arranged in the recess. A first portion of the particles is joined to a porous structure by means of a coating. A second portion of the particles is not joined by means of the coating. The first portion of the particles is arranged closer to an opening of the recess than the second portion of the particles so that a leaking of the second portion of the particles from the recess through the opening is prevented.

Apparatus having a multitude of particles and method for manufacturing the same

A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

Ferroelectric material, MEMS component comprising a ferroelectric material, MEMS device comprising a first MEMS component, method of producing a MEMS component, and method of producing a CMOS-compatible MEMS component

Ferroelectric semiconductor device with a memory cell, with a ferroelectric memory layer and a first conductive layer disposed on the ferroelectric memory layer; and a semiconductor device connected to the memory cell. The ferroelectric memory layer of the memory cell can include a mixed crystal with a group III nitride and a non-group III element.

Ferroelectric semiconductor device and method for producing a memory cell

A micromechanical sound transducer according to a first aspect includes a first bending transducer with a free end and a second bending transducer with a free end, the two bending transducers being arranged in a mutual plane, wherein the free end of the first bending transducer is separated from the free end of the second bending transducer via a slit. The second bending transducer is excited in-phase with the vertical vibration of the first bending transducer. A micromechanical sound transducer according to a second aspect includes a first bending transducer that is excited to vibrate vertically and a diaphragm element extending vertically to the first bending transducer, the diaphragm element being separated from a free end of the first bending transducer via a slit.

Micromechanical sound transducer

A MEMS includes a diaphragm, a stroke structure coupled to the diaphragm, and at least two piezoelectric actuators coupled to a plurality of mutually spaced-apart contact points of the stroke structure via a plurality of mutually spaced-apart connecting elements, the at least two piezoelectric actuators being configured to cause a stroke movement of the stroke structure so as to deflect the diaphragm.

Micromechanical piezoelectric actuators for implementing large forces and deflections

Dielectric motor

Dielectric micromechanical element

Apparatus for measuring mechanical forces and force actions

Growing community of inventors

Looft, Germany

Bernhard Wagner