Evonik Degussa Gmbh

Bernhard Stuetzel

Wolfgang Fahrner

Matthias Patz

Stephan Wieber

Nicole Brausch

Jutta Hessing

Michael Coelle

Janette Klatt

The invention relates to a process for producing an oxygen-containing surface or interface of a silicon layer, which is arranged on a substrate, especially in the production of photovoltaic units.

Modification of silicon layers formed from silane-containing formulations

The invention relates to a formulation which contains at least one silane and at least one carbon polymer in a solvent, and to the production of a silicon layer on a substrate which is coated with such a formulation.

Silicon layers formed from polymer-modified liquid silane formulations

The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235&#xb0; C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.

Method for oligomerizing hydridosilanes, the oligomers that can be produced by means of the method, and the use thereof

The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.

Tailoring the band gap of solar cells made of liquid silane by adding germanium

The present invention relates to a process for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) introducing electromagnetic and/or thermal energy to obtain an at least partly polymorphic silicon layer, (d) providing a liquid formulation which comprises at least one aluminum-containing metal complex, (e) applying this formulation to the silicon layer obtained after step (c) and then (f) heating the coating obtained after step (e) by introducing electromagnetic and/or thermal energy, which decomposes the formulation obtained after step (d) at least to metal and hydrogen, and then (g) cooling the coating obtained after step (f) to obtain an Al-doped or Al- and metal-doped silicon layer, to doped silicon layers obtainable by the process and to the use thereof for production of light-sensitive elements and electronic components.

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Marl, Germany

Bernhard Stuetzel