Siemens Aktiengesellschaft

Infineon Technologies Ag

Bernhard Stegmuller

Bernd Borchert

Richard Matz

Philipp Steinmann

A monolithically integrated combination of a laser diode and a modulator is provided, in which one region of a common active layer structure is used for the laser and an adjacent region of that layer structure is used for the modulator, and in which the layer structure is an MQW structure with asymmetric potential wells decoupled from one another. The material compositions in the potential wells each have the smallest energy bandgap on the n-type side and are matched to the layer structure in such a way that, when the potential difference is applied in the reverse bias direction, a blue shift of the absorption edge beyond the laser wavelength takes place.

Laser diode/modulator combination

Method for production of a DFB laser diode having a coupled optical

DFB laser diode structure having complex optical grating coupling

A metal-clad ridge waveguide laser diode and method has a grating or discontinuity structure formed laterally of the ridge and possibly over the ridge along the laser active region. The discontinuity structure is formed subsequent to the epitaxial formation of the heterostructure and the ridge.

Monomode diode laser

Growing community of inventors

Augsburg, Germany

Bernhard Stegmuller