Intel Corporation

Infineon Technologies Ag

Other

Mcafee, Inc.

Bernhard Sell

Chieh-Jen Ku

Pei-Hua Wang

Travis W LaJoie

Abhishek A Sharma

Tahir Ghani

Van H Le

Jack T Kavalieros

Oleg Golonzka

Allen B Gardiner

Shem Ogadhoh

Juan G Alzate Vinasco

Fatih Hamzaoglu

Juan G Alzate-Vinasco

Umut Arslan

Yih Wang

Matthias Goldbach

Blake C Lin

Dirk Schumann

Nikhil Mehta

Akash Garg

Noriyuki Sato

Josef Willer

Hui Jae Yoo

Thomas Hecht

Sarah Atanasov

Shu Zhou

Annette Sänger

Gregory George

Anand S Murthy

Wilfred Gomes

Harald Seidl

Mark Armstrong

Elliot Tan

Yu-Wen Huang

Matthew V Metz

Martin Gutsche

Arnab Sen Gupta

Akm A Ahsan

Guannan Liu

Jared Stoeger

Julie Rollins

Mauro J Kobrinsky

Kevin Fischer

Kinyip Phoa

Annette Saenger

Leonard C Pipes

Abhishek Sharma

Conor P Puls

J&ouml;rn L&uuml;tzen

Annette S&auml;nger

Leif R Paulson

Ted E Cook, Jr

Vinaykumar Hadagali

James D Waldemer

Travis Lajoie

Chieh-jen Ku

Mark T Bohr

Rishabh Mehandru

Charles Henry Wallace

Helmut Horst Tews

Rajarao Jammy

Manfred Engelhardt

Franz Kreupl

Hans Reisinger

Joseph Francis Shepard, Jr

Mark Y Liu

Ibrahim Ban

Sanjay S Natarajan

Daniel Bourne Aubertine

Till Schl&ouml;sser

Martin Popp

Hyung-Jin Lee

Ayan Kar

Peter Moll

Uwe Schroeder

Sunit Tyagi

J&uuml;rgen Lindolf

Irene Lennox McStay

Harry Gomez

Giuseppe Curello

Saurabh Morarka

Aravind S Killampalli

Jörn Lützen

Martin M Mitan

Justin S Sandford

Chris Auth

Jean-Marc Rousseau

Pulkit Jain

Qiang Yu

Tobias Brown-Heft

Thoe Michaelos

Kimberly L Pierce

Georg Schulze-Icking

Said Rami

Yu-Jin Chen

Timothy Jen

Peter Thieme

Annalisa Cappelani

Manfred Hauf

Transistors with metal oxide channel material that is in-situ doped for desired charge carrier concentrations. The metal oxide channel material may be deposited by atomic layering of multiple constituent metals with an oxidation of each layer. Such an ALD process may be performed by cyclically depositing a precursor of one of the metals upon a substrate during a deposition phase, and oxidizing the absorbed precursor during an oxidation phase. For a quinary metal oxide, each of three metal precursors may be introduced and oxidized during the ALD process, and charge carrier concentrations may be modulated by further introducing a fourth metal precursor during the ALD process in a manner that disperses this dopant metal within the film at a significantly lower chemical concentration than the other metals.

Low defect, high mobility thin film transistors with in-situ doped metal oxide channel material

A device structure includes a first interconnect line along a longitudinal direction and a second interconnect line parallel to the first interconnect line, where the first interconnect structure is within a first metallization level and the second interconnect line is within a second metallization level. A first transistor and a laterally separated second transistor are on a same plane above the second interconnect line, where a gate of the first transistor is coupled to the first interconnect line and a gate of the second transistor is coupled to the second interconnect line. A first capacitor is coupled to a first terminal of the first transistor and a second capacitor is coupled to a first terminal of the second transistor. A third interconnect line couples a second terminal of the first transistor with a second terminal of the second transistor.

Multilevel wordline assembly for embedded DRAM

Embodiments herein describe techniques for a semiconductor device including a substrate. A first capacitor includes a first top plate and a first bottom plate above the substrate. The first top plate is coupled to a first metal electrode within an inter-level dielectric (ILD) layer to access the first capacitor. A second capacitor includes a second top plate and a second bottom plate, where the second top plate is coupled to a second metal electrode within the ILD layer to access the second capacitor. The second metal electrode is disjoint from the first metal electrode. The first capacitor is accessed through the first metal electrode without accessing the second capacitor through the second metal electrode. Other embodiments may be described and/or claimed.

Capacitor connections in dielectric layers

A thin film transistor (TFT) structure includes a gate electrode, a gate dielectric layer on the gate electrode, a channel layer including a semiconductor material with a first polarity on the gate dielectric layer. The TFT structure also includes a multi-layer material stack on the channel layer, opposite the gate dielectric layer, an interlayer dielectric (ILD) material over the multi-layer material stack and beyond a sidewall of the channel layer. The TFT structure further includes source and drain contacts through the interlayer dielectric material, and in contact with the channel layer, where the multi-layer material stack includes a barrier layer including oxygen and a metal in contact with the channel layer, where the barrier layer has a second polarity. A sealant layer is in contact with the barrier layer, where the sealant layer and the ILD have a different composition.

Passivation layers for thin film transistors

A device structure includes transistors on a first level in a first region and a first plurality of capacitors on a second level, above the first level, where a first electrode of the individual ones of the first plurality of capacitors are coupled with a respective transistor. The device structure further includes a second plurality of capacitors on the second level in a second region adjacent the first region, where individual ones of the second plurality of capacitors include a second electrode, a third electrode and an insulator layer therebetween, where the second electrode of the individual ones of the plurality of capacitors are coupled with a first interconnect on a third level above the second level, and where the third electrode of the individual ones of the plurality of capacitors are coupled with a second interconnect.

Decoupling capacitors and methods of fabrication

Described herein are two transistor (2T) memory cells that use TFTs as access and gain transistors. When one or both transistors of a 2T memory cell are implemented as TFTs, these transistors may be provided in different layers above a substrate, enabling a stacked architecture. An example 2T memory cell includes an access TFT provided in a first layer over a substrate, and a gain TFT provided in a second layer over the substrate, the first layer being between the substrate and the second layer (i.e., the gain TFT is stacked in a layer above the access TFT). Stacked TFT based 2T memory cells allow increasing density of memory cells in a memory array having a given footprint area, or, conversely, reducing the footprint area of the memory array with a given memory cell density.

Two transistor memory cell using stacked thin-film transistors

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, buried channel structures integrated with non-planar structures. In an example, an integrated circuit structure includes a first fin structure and a second fin structure above a substrate. A gate structure is on a portion of the substrate directly between the first fin structure and the second fin structure. A source region is in the first fin structure. A drain region is in the second fin structure.

Planar buried channel structure integrated with non-planar structures

Disclosed herein are IC structures with three-dimensional capacitors with double metal electrodes provided in a support structure (e.g., a substrate, a die, a wafer, or a chip). An example three-dimensional capacitor includes first and second capacitor electrodes and a capacitor insulator between them. Each capacitor electrode includes a planar portion extending across the support structure and one or more via portions extending into one or more via openings in the support structure. The capacitor insulator also includes a planar portion and a via portion extending into the via opening(s). The planar portion of the capacitor electrodes are thicker than the via portions. Each capacitor electrode may be deposited using two deposition processes, such as a conformal deposition process for depositing the via portion of the electrode, and a sputter process for depositing the planar portion of the electrode.

Three-dimensional capacitors with double metal electrodes

An interconnect structure is disclosed. The interconnect structure includes a first metal interconnect in a bottom dielectric layer, a via that extends through a top dielectric layer, a metal plate, an intermediate dielectric layer, and an etch stop layer, and a metal in the via to extend through the top dielectric layer, the metal plate, the intermediate dielectric layer and the etch stop layer to the top surface of the first metal interconnect. The metal plate is coupled to an MIM capacitor that is parallel to the via. The second metal interconnect is on top of the metal in the via.

Through plate interconnect for a vertical MIM capacitor

An integrated circuit (IC) structure in a memory device is described. In an example, the IC structure includes a memory cell including a bitline (BL) extending along a first direction and a channel extending along a second direction above and diagonal to the BL. In the example, a wordline (WL) extends in a third direction perpendicular to the first direction of the BL and intersects with the channel to control a current in the channel along a gated channel length. In some examples, the channel is electrically coupled on a first side to a storage capacitor via a storage node contact (SNC) and on a second side to the BL via a bit line contact (BLC) located on an underside or backside of the channel.

Thin film transistors having a backside channel contact for high density memory

Disclosed herein are transistors, memory cells, and arrangements thereof. For example, in some embodiments, an integrated circuit (IC) structure may include a plurality of transistors, wherein the transistors are distributed in a hexagonally packed arrangement. In another example, in some embodiments, an IC structure may include a memory cell including an axially symmetric transistor coupled to an axially symmetric capacitor, wherein the axis of the transistor is aligned with the axis of the capacitor.

Transistors, memory cells, and arrangements thereof

Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.

Method of forming stacked trench contacts and structures formed thereby

Thin film transistors fabricated using a spacer as a fin are described. In an example, a method of forming a fin transistor structure includes patterning a plurality of backbone pillars on a semiconductor substrate. The method may then include conformally depositing a spacer layer over the plurality of backbone pillars and the semiconductor substrate. A spacer etch of the spacer layer is then performed to leave a sidewall of the spacer layer on a backbone pillar to form a fin of the fin transistor structure. Other embodiments may be described and claimed.

Fabrication of thin film fin transistor structure

Integrated circuit structures having differentiated interconnect lines in a same dielectric layer, and methods of fabricating integrated circuit structures having differentiated interconnect lines in a same dielectric layer, are described. In an example, an integrated circuit structure includes an inter-layer dielectric (ILD) layer above a substrate. A plurality of conductive interconnect lines is in the ILD layer. The plurality of conductive interconnect lines includes a first interconnect line having a first height, and a second interconnect line immediately laterally adjacent to but spaced apart from the first interconnect line, the second interconnect line having a second height less than the first height.

Integrated circuit structures having differentiated interconnect lines in a same dielectric layer

Semiconductor devices having necked semiconductor bodies and methods of forming semiconductor bodies of varying width are described. For example, a semiconductor device includes a semiconductor body disposed above a substrate. A gate electrode stack is disposed over a portion of the semiconductor body to define a channel region in the semiconductor body under the gate electrode stack. Source and drain regions are defined in the semiconductor body on either side of the gate electrode stack. Sidewall spacers are disposed adjacent to the gate electrode stack and over only a portion of the source and drain regions. The portion of the source and drain regions under the sidewall spacers has a height and a width greater than a height and a width of the channel region of the semiconductor body.

Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width

Growing community of inventors

Portland, OR, United States of America

Bernhard Sell