Eads Deutschland Gmbh

Bernhard Schönlinner

Ulrich Prechtel

Volker Ziegler

William Gautier

Armin Stehle

A high frequency-MEMS switch with a bendable switching element, whose one end is placed on a high resistivity substrate provided with an insulator, furthermore with a contact electrode to supply charge carriers to the substrate, wherein an electrical field can be produced to create an electrostatic bending force on the switching element between the switching element and the substrate, wherein at least one implantation zone is formed in the substrate, essentially directly beneath the insulator, the implantation zone is contacted with the contact electrode, which is located above the insulator, through an opening in the insulator, and also has ohmic contact with the substrate.

HF-MEMS switch

The present disclosure provides example resonance filters and methods for making the same. The resonance filter includes a first layer having n adjacent resonance cavities, n being at least 2 and said cavities each being separated from one another by a partition wall. The resonance filter also includes a second layer having at least n&#x2212;1 coupling cavities. The cavities in the first layer are formed as resonance cavities and those in the second layer are formed as (a) coupling cavity/cavities and are open on one side. The second layer is arranged on the first layer in such a way that the resonance cavities in the first layer are interconnected by the coupling cavity/cavities in the second layer. Further, the resonance filter is configured as a monolithic component.

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Munich, Germany

Bernhard Schönlinner