Ev Group E. Thallner Gmbh

Bernhard Rebhan

Markus Wimplinger

Klaus Martinschitz

Jürgen Burggraf

Kurt Hingerl

A method for bonding of a first solid substrate to a second solid substrate which contains a first material with the following steps, especially the following sequence: formation or application of a function layer which contains a second material to the second solid substrate, making contact of the first solid substrate with the second solid substrate on the function layer, pressing together the solid substrates for forming a permanent bond between the first and second solid substrate, at least partially reinforced by solid diffusion and/or phase transformation of the first material with the second material, an increase of volume on the function layer being caused.

Method for permanently bonding wafers by a connecting layer by means of solid state diffusion or phase transformation

A method and corresponding device for permanent bonding of a first layer of a first substrate to a second layer of a second substrate on a bond interface, characterized in that a dislocation density of a dislocation of the first and/or second layer is increased at least in the region of the bond interface before and/or during the bonding.

Device and method for permanent bonding

A method for bonding of a first, at least partially metallic contact surface of a first substrate to a second, at least partially metallic contact surface of a second substrate, with the following steps, especially the following progression: application of a sacrificial layer which is at least partially, especially predominantly soluble in the material of at least one of the contact surfaces to at least one of the contact surfaces, bonding of the contact surfaces with at least partial solution of the sacrificial layer in at least one of the contact surfaces.

Method for bonding metallic contact areas with solution of a sacrificial layer applied on one of the contact areas

A method and a device for determining the pressure distribution for bonding of a first substrate to a second substrate, with the following steps, especially with the following sequence: placing a measurement layer between a first tool for holding the first substrate and an opposite second tool which is aligned to the first tool for bonding of the substrate, deformation of the measurement layer by bringing the tools closer to one another, measurement of the deformation of the measurement layer and computation of the pressure distribution.

Method and device for determining the pressure distribution for bonding

A device for bonding of one bond side of a first substrate to one bond side of a second substrate, the device having one module group with a common working space which can be closed especially gastight to the environment, at least one bond module is connected in a sealed manner to the working space, and a movement apparatus for moving the first and second substrate in the working space. The module group has a reduction module which is connected, in a sealed manner to the working space for reducing the bond sides.

Device and method for bonding substrates

A method for coating of a first substrate with a first diffusion bond layer by deposition of a first material which forms the first diffusion bond layer on a first surface of the first substrate such that the first diffusion bond layer forms a grain surface with an average grain diameter H parallel to the first surface smaller than 1 &#x3bc;m. The invention further relates to a method for bonding of a first substrate which has been coated as described above to a second substrate which has a second diffusion bond layer, the method of the bonding comprising the following steps: bring a first diffusion bond layer of a first substrate into contact with a second diffusion bond layer of a second substrate, pressing the substrates together to form a permanent metal diffusion bond between the first and second substrates.

Method for coating and bonding substrates

A method for bonding a first bond surface of a first solid substrate consisting of a first material to a second bond surface of a second solid substrate consisting of a second material. The method including the steps of: working one of the first and/or second bond surfaces with a cutting tool at a speed vthat is below a critical speed vand at a temperature Tthat exceeds a critical temperature T, down to a surface roughness O that is less than 1 &#x3bc;m; bringing the first solid substrate into contact with the second solid substrate at the bond surfaces, and exposing the solid substrates that are in contact to temperature in order to form a permanent bond that is at least primarily produced by recrystallization at the bond surfaces.

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Haag a. H., Austria

Bernhard Rebhan