Ams Ag

Austriamicrosystems Ag

Bernhard Löffler

Martin Schrems

Gerald Meinhardt

Jochen Kraft

Jörg Siegert

Ingrid Jonak-Auer

Franz Schrank

Martin Knaipp

Georg Röhrer

Jordi Teva

Hubert Enichlmair

Bernhard Stering

Günther Koppitsch

Ewald Wachmann

Stefan Jessenig

Karl Rohracher

Gernot Fasching

A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.

Semiconductor device for infrared detection, method of manufacturing semiconductor device for infrared detection and infrared detector

The near-infrared photodetector semiconductor device comprises a semiconductor layer () of a first type of conductivity with a main surface (), a trench or a plurality of trenches () in the semiconductor layer at the main surface, a SiGe alloy layer () in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.

Near-infrared photodetector semiconductor device

A semiconductor substrate () is provided with a structure () on an upper side (), and an additional substrate () provided for handling the semiconductor substrate is likewise structured on an upper side (). The structuring of the additional substrate takes place in at least partial correspondence with the structure of the semiconductor substrate. The structured upper sides of the semiconductor substrate and the additional substrate are positioned such that they face one another and are permanently connected to one another. Subsequently, the semiconductor substrate is thinned from the rear side (), and the additional substrate is removed at least to such a degree that the structure of the semiconductor substrate is exposed to the extent required for the further use.

Method for producing thin semiconductor components

Through the intermetal dielectric () and the semiconductor material of the substrate () a contact hole is formed, and a contact area of a connection metal plane () that faces the substrate is exposed in the contact hole. A metallization () is applied, which forms a connection contact () on the contact area, a through-contact () in the contact hole and a connection contact () on a contact area facing away from the substrate and/or on a vertical conductive connection () of the upper metal plane ().

Method for producing a semiconductor component with a through-contact and semiconductor component with through-contact

A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.

Light-sensitive component with increased blue sensitivity, method for the production thereof, and operating method

A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced.

Photodiode with a reduced dark current and method for the production thereof

A method for manufacturing a semiconductor body with a trench comprises the steps of etching the trench () in the semiconductor body () and forming a silicon oxide layer () on at least one side wall () of the trench () and on the bottom () of the trench () by means of thermal oxidation. Furthermore, the silicon oxide layer () on the bottom () of the trench () is removed and the trench () is filled with polysilicon that forms a polysilicon body ().

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Gleisdorf, Austria

Bernhard Löffler