Siemens Aktiengesellschaft

Infineon Technologies Ag

Infineon Technologies LLC

Bernhard Lustig

Kurt Hoffmann

Martin Franosch

Oskar Kowarik

Rainer Kraus

Lothar Risch

Herbert Schaefer

Hans-Dieter Oberle

Herbert Sch&auml;fer

Dieter Sewald

Hans D Oberle

Peter Klein

In an interface circuit for connection to an output of a frequency converter, at least two current paths are coupled to one another in parallel. Each current path includes at least one cascode stage for signal processing. The circuit compensates for DC voltage offsets of the frequency converter, and has a gain ratio that can be changed over for signals with a large dynamic range.

Interface circuit for connecting to an output of a frequency converter

A MOS transistor and a method for fabricating the same include producing a well doped by a first conductivity type in a semiconductor substrate. An epitaxial layer having a dopant concentration of less than 10 cm is disposed on a surface of the doped well. Source/drain regions doped by a second conductivity type, opposite to the first conductivity type, and a channel region, are disposed in the epitaxial layer, and their depth is less than or equal to the thickness of the epitaxial layer. A method for fabricating two complementary MOS transistors is also provided.

MOS transistor, method for fabricating a MOS transistor and method for fabricating two complementary MOS transistors

A MOS transistor has a gate electrode (,) having a T-shaped cross-section. The gate length is defined in a first structuring step by a spacer technique. The area of the gate electrode in the upper region is defined in a second structuring step. The MOS transistor can be produced with a channel length of less than 100 nm.

Process for producing an MOS transistor

Method of producing a MOS transistor

Semiconductor islands respectively comprise at least a Si.sub.1-x Ge.sub.x layer and a distorted silicon layer that exhibits essentially the same lattice constant as the Si.sub.1-x Ge.sub.x layer are formed on an insulating layer that is located on a carrier plate. The semiconductor islands are preferably formed by selective epitaxy and comprise p-channel MOS transistors and/or n-channel MOS transistors.

Integrated CMOS circuit arrangement and method for the manufacture

A gate electrode for an MOS structure, such as a short-channel MOS transistor, is produced. First, a hard mask is created, using a spacer of the material of the gate electrode as the etching mask, and the hard mask is used to structure the gate electrode. The method is suitable particularly for the production of gate electrodes with very thin gate dielectrics with channel lengths below 100 nm.

Method for producing a gate electrode for an MOS structure

Circuit arrangement for testing a semiconductor memory by means of

An integrated semiconductor memory includes a memory cell field having memory cells disposed in matrix form, word lines and internal bit lines forming pairs of internal bit lines for triggering the memory cells. Internal weighting circuits are each assigned to a respective one of the internal bit line pairs. An external pair of bit lines is commonly assigned to the internal bit lines. Pairs of separation transistors are each assigned to a respective one of the internal bit line pairs for electrical separation of the respective internal bit line pair from the external pair of bit lines. A bit line decoder triggers the pairs of separation transistors. An external weighting circuit is provided. A discriminator device and a precharging device are connected to the external bit line pair. The internal bit lines of each pair of internal bit lines are triggered separately from one another. The internal bit lines of each pair of internal bit lines are connected to the external bit line pair separately from one another.

Integrated semiconductor memory

A redundancy decoder of an integrated semiconductor memory having a plurality of decoder stages containing a switching transistor and a separable connection having respective conditions in which the separable connection is severed and intact, as well as at least one charging transistor, comprising, in each of the decoder stages, an addressing circuit connected to and between the switching transistor and the separable connection of the respective decoder stages, the addressing circuit being electrically simulatable when the respective separable connection is in the intact condition thereof.

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Munich, Germany

Bernhard Lustig