Ams Ag

Austriamicrosystems Ag

Bernhard Loeffler

Franz Schrank

Jochen Kraft

Georg Roehrer

Joerg Siegert

Hubert Enichlmair

Thomas Bodner

Sara Carniello

Guenther Koppitsch

Rainer Holzhaider

An intermetal dielectric and metal layers embedded in the intermetal dielectric are arranged on a substrate of semiconductor material. A via hole is formed in the substrate, and a metallization contacting a contact area of one of the metal layers is applied in the via hole. The metallization, the metal layer comprising the contact area and the intermetal dielectric are partially removed at the bottom of the via hole in order to form a hole penetrating the intermetal dielectric and extending the via hole. A continuous passivation is arranged on sidewalls within the via hole and the hole, and the metallization contacts the contact area around the hole. Thus the presence of a thin membrane of layers, which is usually formed at the bottom of a hollow through-substrate via, is avoided.

Semiconductor device with through-substrate via and method of manufacturing a semiconductor device with through-substrate via

A dielectric layer () is arranged on the main surface () of a semiconductor substrate (), and a passivation layer () is arranged on the dielectric layer. A metal layer () is embedded in the dielectric layer above an opening () in the substrate, and a metallization () is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface () of the substrate. A layer or layer sequence () comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug () may additionally be arranged in the opening without filling the opening.

Semiconductor device with through-substrate via and corresponding method of manufacture

An opening () is etched from a main surface () of a substrate () of semiconductor material by deep reactive ion etching comprising a plurality of cycles, each of the cycles including a deposition of a passivation in the opening and an application of an etchant. An additional etching is performed between two consecutive cycles by an application of a further etchant that is different from the etchant. The passivation layer () is thus etched above a sidewall () of the opening to remove undesired protrusions.

Method of producing an opening with smooth vertical sidewall in a semiconductor substrate

A micromechanical component that can be produced in an integrated thin-film method is disclosed, which component can be produced and patterned on the surface of a substrate as multilayer construction. At least two metal layers that are separated from the substrate and with respect to one another by interlayers are provided for the multilayer construction. Electrically conductive connecting structures provide for an electrical contact of the metal layers among one another and with a circuit arrangement arranged in the substrate. The freely vibrating membrane that can be used for an inertia sensor, a microphone or an electrostatic switch can be provided with matching and passivation layers on all surfaces in order to improve its mechanical properties, said layers being concomitantly deposited and patterned during the layer producing process or during the construction of the multilayer construction. Titanium nitride layers are advantageously used for this.

Micromechanical component, method for fabrication and use

A transistor includes an emitter, a collector, and a base layer having a base contact. The base layer includes an intrinsic region between the emitter and the collector, an extrinsic region between the intrinsic region and the base contact, and a first doping layer that is doped with a trivalent substance, that extends into the extrinsic region, and that is counter-doped with a pentavalent substance in a region adjacent to the emitter.

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Gleisdorf, Austria

Bernhard Loeffler