Infineon Technologies Ag

Infineon Technologies Austria Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Bernhard Knott

Carsten Ahrens

Alfons Dehe

Stephan Pindl

Stefan Willkofer

Horst Theuss

Uwe Wahl

Andreas Strasser

Markus Hammer

Mathias Vaupel

Josef Höglauer

Thoralf Kautzsch

Gottfried Beer

Rainer Leuschner

Georg Tempel

Mirko Vogt

Wolfgang Lehnert

Ulrich Krumbein

Steffen Bieselt

Maik Stegemann

Heiko Froehlich

Rudolf Berger

Uwe Hoeckele

Wolfram Langheinrich

Uwe Jansen

Andre Roeth

Juergen Wagner

Berthold Schuderer

Marco Haubold

Manfred Frank

A method for producing a semiconductor component is proposed. The method includes providing a housing. At least one semiconductor chip is arranged in a cavity of the housing. Furthermore, an electrical contact of the semiconductor chip is connected to an electrical contact of the housing via a bond wire. The method furthermore includes applying a protective material on the electrical contact of the housing and also on a region of the bond wire which is adjacent to the electrical contact of the housing. Moreover, the method also includes filling at least one partial region of the cavity with a gel.

Semiconductor component and method for producing same

A method for producing a semiconductor component is proposed. The method includes providing a housing. At least one semiconductor chip is arranged in a cavity of the housing. Furthermore, an electrical contact of the semiconductor chip is connected to an electrical contact of the housing via a bond wire. The method furthermore includes applying a protective material on the electrical contact of the semiconductor chip and also on a region of the bond wire which is adjacent to the electrical contact of the semiconductor chip, and/or on the electrical contact of the housing and also on a region of the bond wire which is adjacent to the electrical contact of the housing. Moreover, the method also includes filling at least one partial region of the cavity with a gel.

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

Stressed decoupled micro-electro-mechanical system sensor

A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

MEMS device and method of manufacturing a MEMS device

A method for manufacturing an inductor core is developed, wherein the method comprises the following: Forming a first electrical conductor on a first surface of a plate-shaped magnetic core; forming a second electrical conductor on a second surface of the plate-shaped magnetic core, which is opposite the first surface; and forming the inductor core by dicing the plate-shaped magnetic core transverse to the first electrical conductor and second electrical conductor.

Method of manufacturing an inductor core for a chip assembly and chip assembly

A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Semiconductor device and method of manufacture thereof

A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

Method for producing a semiconductor device

A semiconductor device with a number of integrated coils is disclosed. In one embodiment, a first coil portion and a second coil portion are at least in part overlapping each other. Another embodiment provides a process for manufacturing a semiconductor device having at least the processes of generating a first coil portion, generating a second coil portion, wherein at least a part of the first coil portion and a part of the second coil portion are overlapping each other.

Semiconductor device with integrated coils

An integrated circuit includes a substrate and an inductive device on a first side of the substrate. The integrated circuit includes a first ferromagnetic material on a second side of the substrate opposite the first side.

Integrated circuit including inductive device and ferromagnetic material

The invention relates to a detector arrangement (), a method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge. The detector arrangement () has an ONO field effect transistor embodied on and/or in a substrate (), for the detection of electrical charge carriers, such that the electrical charge carrier () for detection may be introduced into die ONO field effect transistor layer sequence (), a recording unit (104), coupled to the ONO field effect transistor, for recording an electrical signal characteristic of the amount and/or the charge carrier type for the electrical charge carrier () introduced into the ONO layer sequence () and an analytical unit for determining the amount and/or the charge carrier type of the electrical charge carrier () introduced into the ONO layer sequence () from the characteristic electrical signal.

Detector arrangement, method for the detection of electrical charge carriers and use of an ONO field effect transistor for detection of an electrical charge

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Neumarkt, Germany

Bernhard Knott