Applied Materials, Inc.

Bernhard Gunter Mueller

Kulpreet Singh Virdi

Bernhard Schüler

Robert Trauner

Nikolai Knaub

Matthias Brunner

Ralf Schmid

Axel Wenzel

Ludwig Ledl

Georg Jost

Peter Nunan

George Tzeng

Volker Daiker

Peter C Staffansson

Bernhard SCHÜLER

A method for inspecting a sample with a multi-electron beam inspection system () is described. The method includes: placing the sample on a movable stage () extending in an X-Y-plane; generating a plurality of electron beams () propagating toward the sample; focusing the plurality of electron beams on the sample at a plurality of probe positions () in a two-dimensional array; scanning the sample surface by moving the movable stage in a predetermined scanning pattern while maintaining the plurality of electron beams stationary; and detecting signal electrons emitted from the sample during the movement of the movable stage for inspecting the sample. Further, a multi-electron beam inspection system () for inspecting a sample according to the above method is described.

Method of inspecting a sample, and multi-electron beam inspection system

A method for testing a packaging substrate with at least one electron beam column is described, wherein the packaging substrate is a panel level packaging substrate or an advanced packaging substrate. The method includes placing the packaging substrate on a stage in a vacuum chamber; directing at least one electron beam of the at least one electron beam column on at least a first portion of the packaging substrate; directing the at least one electron beam of the at least one electron beam column on at least a second portion of the packaging substrate; detecting signal electrons emitted upon impingement of the at least one electron beam for testing a first device-to-device electrical interconnect path of the packaging substrate; and illuminating at least a third portion of the packaging substrate with UV radiation.

Method for testing a packaging substrate, and apparatus for testing a packaging substrate

According to an embodiment, a method for automated critical dimension measurement on a substrate for display manufacturing is provided. The method includes scanning a first field of view having a first size with a charged particle beam to obtain a first image having a first resolution of a first portion of the substrate for display manufacturing; determining a pattern within the first image, the pattern having a first position; scanning a second field of view with the charged particle beam to obtain a second image of a second portion of the substrate, the second field of view has a second size smaller than the first size and has a second position provided relative to the first position, the second image has a second resolution higher than the first resolution; and determining a critical dimension of a structure provided on the substrate from the second image.

Method for automated critical dimension measurement on a substrate for display manufacturing, method of inspecting a large area substrate for display manufacturing, apparatus for inspecting a large area substrate for display manufacturing and method of operating thereof

A method of automatically focusing a charged particle beam on a surface region of a sample is provided. The method includes acquiring a plurality of images for a corresponding plurality of focusing strength values; calculating a plurality of sharpness values based on the plurality of images, the plurality of sharpness values are calculated with a sharpness function provided as a sum in a frequency space based on the plurality of images; and determining subsequent focusing strength values of the plurality of focusing strength values with a golden ratio search algorithm based one the calculated sharpness values.

Method of automatically focusing a charged particle beam on a surface region of a sample, method of calculating a converging set of sharpness values of images of a charged particle beam device and charged particle beam device for imaging a sample

A method of automatically focusing a charted particle beam on a surface region of a sample is provided. The method includes acquiring a plurality of images for a corresponding plurality of focusing strength values; calculating a plurality of sharpness values based on the plurality of images, the plurality of sharpness values are calculated with a sharpness function provided as a sum in a frequency space based on the plurality of images; and determining subsequent focusing strength values of the plurality of focusing strength values with a golden ratio search algorithm based one the calculated sharpness values.

A method of inspecting a sample with a charged particle beam device is described. The method comprises arranging the sample on a stage, determining a first focusing strength of an objective lens adapted to focus a charged particle beam on a first surface region of the sample that is arranged at a first distance from the objective lens in a direction of an optical axis, calculating a difference between the first distance and a predetermined working distance based on the determined first focusing strength, adjusting a distance between the first surface region and the objective lens by the calculated difference, and inspecting the first surface region. According to a further aspect, a charged particle beam device configured to be operated according to the above method is described.

Method of inspecting a sample with a charged particle beam device, and charged particle beam device

A charge control apparatus for controlling charge on a substrate in a vacuum chamber is described. The apparatus includes a light source emitting a beam of radiation having a divergence; a mirror configured to reflect the beam of radiation, wherein a curvature of a mirror surface of the curved mirror is configured to reduce the divergence of the beam of radiation; and a mirror support configured to rotatably support the curved mirror, wherein a rotation of the mirror varies the direction of the beam of radiation.

Apparatus configured for enhanced vacuum ultraviolet (VUV) spectral radiant flux and system having the apparatus

A substrate support unit adapted for a system for testing or processing of a substrate is provided. The substrate support unit includes a support table having at least one substrate carrier structure adapted to support a substrate, wherein the substrate carrier structure is electrically floating with respect to ground.

Apparatus and method for electrostatic discharge (ESD) reduction

A voltage compensation assembly adapted for apparatus having a prober for contacting the electronic elements on a substrate is described. The voltage compensation assembly includes a controller connected to the prober and adapted for active voltage compensation, and a voltage measuring unit connected to the controller and for measuring a voltage on the substrate.

Apparatus and method for active voltage compensation of electrostatic discharge of a substrate

The present invention relates to a device for testing an optoelectronic module, comprising a first source for generating an electromagnetic beam or particle beam, a second source for illuminating the optoelectronic module; and a detector. In addition, a method for testing an optoelectronic module is provided comprising illuminating the optoelectronic module, directing an electromagnetic beam or particle beam and detecting defects in the optoelectronic module. The illumination additional to the electromagnetic beam or particle beam makes defects visible which otherwise would not be detected.

Light-assisted testing of an optoelectronic module

The invention relates to a method of calibration of the beam position of a corpuscular beam. A calibration body with structures is used, wherein the structures have a structure period Pin the plain section and within each structure there is a position L intended for the measurement. For the calibration, at least one detection signal each at structures in the plain section of the calibration body is generated, wherein the corpuscular beam is deflected with deflectors on beam target positions Lwith the beam target period P, which is larger than half of the structure period P, whereby a basic calibration is used for the control of the deflectors, and wherein the beam target deflections deviate either in the beam target period Pfrom the structure period Pand/or in the beam target position Lfrom the position L.

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Finsing, Germany

Bernhard Gunter Mueller