Singulus Technologies Ag

Leybold Aktiengesellschaft

Oc Oerlikon Balzers Ag

Unaxis Deutschland Gmbh

Balzers Und Leybold Deutschland Holding Aktiengesellscaft

Bernhard Cord

Karl-Heinz Schuller

Stefan Kempf

Jaroslav Zejda

Michael Reising

Karl Schmitt

Helmut Rauner

Gerd Deppich

Frank Hofmann

Andreas Amrhein

Dieter Scherger

Oliver Keitel

Uwe Horlitz

A treatment machine comprises a chamber for the treatment of one substrate or a plurality of substrates. A rotatably supported temperature-controlled shaft () defines a cylindrical, gas-tight hollow space. A heating arrangement () is provided for electrically heating at least a part of the shaft () arranged in the chamber. The heating arrangement () comprises an accommodation mandrel () for accommodating at least one electrical heating element (), said accommodation mandrel () being arranged in a non-rotating manner and extending into the hollow space of the shaft (). An outer surface of the accommodation mandrel () is spaced apart from an inner surface of the shaft () by a gap.

Treatment machine, drive unit for a treatment machine and use of the treatment machine

A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

Vacuum lock and method for transferring a substrate carrier

The invention concerns a device and a process for applying a lubricant by means of vapour deposition to a target object, especially a magnetic data carrier. The device in accordance with the invention comprises a lubricant supply means () that can be filled from outside, possibly by means of a feed line. The produced lubricant vapour () is expanded through one or more exit openings () in the direction of a target object () on which the vapour deposition is to be effected. The vapour at first becomes adsorbed on the walls of a cone-shaped distribution element () situated between the lubricant supply means () and the target object (), from which it subsequently desorbs again. Said adsorption/desorption process assures an even and homogeneous vapour distribution over the target object (). A device for interrupting the vapour supply makes it possible for the device to be operated in a discontinuous manner.

Method and device for vacuum sputtering

A target of an alloy of metals having different specific weights is used in a method for producing substrates that are coated with a layer comprising the same two metals by magnetron sputtering of the target. When sputtering such a target material, the metals of the alloy will sputter off with different sputtering characteristics with regard to a static angle &agr; at which the sputtered off material leaves the target. For this reason, at the substrate to be sputter-coated, there occurs a demixing effect of these metals which will be deposited with a varying local ratio of the metals, that differs form the ratio of the metals in the alloy of the target. To counter-act this demixing phenomenon, the location of an electron trap formed by the magnetron field of the sputter source at the target with respect to the location of the substrate, is selected. By proving this electron trap and the resulting erosion profile on the target, the amount of deposited heavier metal to the amount of lighter metal is increased along the surface of the substrate.

Method for the production of substrates, magnetron source and sputter-coating chamber

A heating disk is located inside a vacuum chamber between a substrate holder inside the chamber and a lamp outside the chamber. The lamp emits radiation in a wavelength range which passes through a glass plate in the chamber wall but is absorbed by the heating disk, which may consist of graphite. When the disk is heated to 1000.degree. K. it emits radiation in a wavelength range which can be absorbed by a transparent substrate in the holder.

Apparatus for heating a transparent substrate utilizing an incandescent

An evacuable tank having gas inlet and gas outlet openings, with at least one large-area anode at ground potential and a cathode provided as a substrate holder disposed substantially parallel thereto and connected to a high-frequency voltage source. The anode surface has step-shaped areas each being spaced at a different distance from the cathode in order to maintain a uniform ion concentration and therefore a uniform plasma.

Apparatus for large-area ionic etching

Growing community of inventors

Alzenau, Germany

Bernhard Cord