Infineon Technologies Ag

Bernhard Auer

Robert Illing

Markus Ladurner

Luca Petruzzi

Christian Djelassi

Christian Djelassi-Tscheck

Paolo Del Croce

Alexander Mayer

Norbert Krischke

Stefan Woehlert

Andre Mourrier

Michael Nelhiebel

Thomas Detzel

Hans-Peter Kreuter

Sven Lanzerstorfer

Stefan Decker

Kurt Matoy

Alberto Zanardi

Mario Tripolt

Arno Zechmann

David Jacquinod

Michael Luschin

Thomas Blasius

An integrated circuit that may be employed as a smart switch is described herein. In accordance with one embodiment the integrated circuit includes a power transistor coupled between a supply pin and an output pin and further includes a control circuit configured to trigger a switch-on and a switch-off of the power transistor in accordance with an input signal. The control circuit is configured to trigger a switch-off of the power transistor when a load current passing through the power transistor is at or above a predetermined current and a supply voltage received at the supply pin is at or below a predetermined threshold voltage.

Smart electronic switch

Examples disclosed herein involve integrated circuit chip arrangements. An example integrated circuit (IC) package may include a first semiconductor chip that includes a first metal-oxide-semiconductor field-effect transistor (MOSFET) and a second semiconductor chip mounted within a housing of the IC package. The second semiconductor chip may include a second MOSFET and a control circuit configured with a first driver for the first MOSFET and a second driver for the second MOSFET. The first semiconductor chip may be mounted to the second semiconductor chip opposite a base of the IC package.

Integrated circuit (IC) chip arrangement

Devices and methods comprising a switch and an overload detection are disclosed. When an overload detection is detected, a first retry scheme followed by a second retry scheme different from the first retry scheme may be applied. If the overload condition persists, the switch may be disabled.

Power switch device

A semiconductor device includes a semiconductor body, at least one wiring layer disposed on the semiconductor body and a field effect transistor integrated in the semiconductor body. The field effect transistor has a plurality of gate electrodes residing in corresponding gate trenches formed in the semiconductor body. A first circuit is integrated in the semiconductor body adjacent to the field effect transistor, and a second circuit is integrated in the semiconductor body remote from the first circuit. A first additional trench is formed in the semiconductor body and includes at least one connecting line which electrically connects the first circuit and the second circuit. The semiconductor device also includes at least one conductive pad formed in the at least one wiring layer. The at least one conductive pad is arranged to at least partially cover the first additional trench to form a shielding of the at least one connecting line.

Semiconductor switch with integrated temperature sensor

A semiconductor device is disclosed. In accordance with a first aspect of the present invention the device includes a semiconductor chip having a substrate, a first supply terminal electrically coupled to the substrate to provide a first supply potential (V) and a load current to the substrate, and a second supply terminal operably provided with a second supply potential. A first vertical transistor is integrated in the semiconductor chip and electrically coupled between the supply terminal and an output terminal. The first vertical transistor is configured to provide a current path for the load current to the output terminal in accordance with a control signal, which is provided to a gate electrode of the first vertical transistor.

Reverse polarity protection for n-substrate high-side switches

An embodiment method for power switch temperature control comprises monitoring a power transistor for a delta-temperature fault, and monitoring the power transistor for an over-temperature fault. If a delta-temperature fault is detected, then the power transistor is commanded to turn off. If an over-temperature fault is detected, then the power transistor is commanded to turn off, and delta-temperature hysteresis cycling is disabled.

Power switch temperature control device and method

Power transistor cells are formed in a cell array of an integrated circuit. Contact vias may electrically connect a metal structure above the cell array and the power transistor cells. A connecting line electrically connects a first element arranged in the cell array and a second element arranged in a peripheral region. A portion of the connecting line is arranged between the metal structure and the cell array and runs between a first axis and a second axis which are arranged parallel and at a distance to each other. The distance is greater than a width of the connecting line portion. The connecting line portion is tangent to both the first axis and the second axis. Shear-induced material transport along the connecting line is reduced by shortening critical portions or by exploiting grain boundary effects. The reliability of an insulator structure covering the connecting line is increased.

Integrated circuit including power transistor cells and a connecting line

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Millstatt, Austria

Bernhard Auer