Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Other

Bernd Schultrich

Peter Siemroth

Norbert Urbansky

Hans-Joachim Scheibe

Carl-Friedrich Meyer

Christian Wenzel

Holger Ziegele

Horst Kleinert

Wolfgang Klimes

Thomas Shuelke

Sven Grosser

Volker Dr-Ing Weihnacht

The invention relates to a method and a device for coating substrates in a vacuum, in which a plasma is generated from a target using a laser beam and ionized particles of the plasma are deposited on the substrate in the form of a layer, inert reactive gas or a gas mixture being supplied. The solution according to the invention is intended to provide a possible way of supplying gases or gas mixtures in a locally and temporally defined manner. According to the invention, this object is achieved by the fact that the gas or gas mixture is supplied to the plasma from and/or through a porous target, the intention being that the target is to have a temporary storage function on account of its porosity.

Method and device for coating substrates in a vacuum

The invention relates to a process and a device for metallization of semiconductor structures, with which areas of the surface can be connected to be electrically conductive using strip conductors in one or a plurality of planes, and contacts between the strip conductors of different planes. The process for producing metallic coatings on semiconductor structures by depositing from a vapor phase under vacuum, in trenches produced for the strip conductors and holes for strip conductor connection in the substrate material such as SiO,or other inorganic and organic materials is characterized in that a known per se pulsed vacuum-arc evaporator is used, a barrier layer being deposited on the surface of the trenches and holes of the substrates using the plasma of the evaporator and/or the trenches and holes being filled with low-impedance strip conductor material from a further plasma of said type of evaporator. The invention describes a device for carrying out the process which can be used, along with the device, to metal-coat trenches and holes with a high aspect ratio without hollow spaces.

Process and device for production of metallic coatings on semiconductor structures

A process and an apparatus that can be used for surface preparation and treatment of a metal workpiece surface, for example in a processing stage prior to adhesive assembly, without using environmentally harmful materials. The process comprises triggering and maintaining pulsed unipolar arc discharges between an electrode wired as an anode and a workpiece surface wired as a cathode, with the arc discharges following one another with a timing, number, and speed such that they do not cause macroscopic melting of the workpiece surface while ensuring complete extinction of the individual arc discharges. The apparatus comprises an electrode as the anode and the workpiece as the cathode, and a generator or component for generating electrical pulses.

Process for treatment of metal workpiece surface by electrical discharges

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Dresden, Germany

Bernd Schultrich