Helmholtz-zentrum Berlin Fuer Materialien Und Energie Gmbh

Forschungszentrum Julich Gmbh

Forschungszentrum Juelich Gmbh

Helmholtz-zentrum Berlin Für Materialien Und Energie Gmbh

Bernd Rech

Matthias Bockmeyer

Eveline Rudigier-Voigt

Rolf Stangl

Tobias Repmann

Klaus Lips

Oliver Kluth

Stefan Gall

Daniel Amkreutz

Joachim Müller

Gunnar Schöpe

Jan Haschke

Hildegard Siekmann

Wolfgang Apenzeller

Brigitte Sehrbrock

Tobias Roschek

Tobias Sontheimer

Christiane Becker

Joachim Mueller

Grit KÖPPEL

David Eisenhauer

Jürgen Hüpkes

Michael Berginski

Martin Muske

Juliane Berghold

Kyo Youl Lee

A back-contact Si thin-film solar cell includes a crystalline Si absorber layer and an emitter layer arranged on the crystalline Si absorber layer, which include a contact system being arranged on the back so as to collect excess charge carriers generated by the incidence of light in the absorber layer; a barrier layer having a layer thickness in a range of from 50 nm to 1 &#x3bc;m formed on a glass substrate; at least one coating layer intended for optical coating; and thin layer containing silicon and/or oxygen adjoining the crystalline Si absorber layer arranged on the at least one coating layer for improving the optical characteristics. The crystalline Si absorber layer can be produced by means of liquid-phase crystallization, is n-conducting, and has monocrystalline Si grains. An SiO2 passivation layer is formed between the layer containing silicon and/or oxygen and the Si absorber layer during the liquid-phase crystallization.

Back-contact Si thin-film solar cell

A thin-film solar module contacted on one side includes a support layer, a photoactive absorber layer and at least one dopant layer deposited over a surface area of at least one side of the absorber layer so as to form a thin-film packet that is divided into thin-film solar cell areas by insulating separating trenches. The thin-film solar module includes first and second contact systems. The first contact system includes contacts connected by an outer contact layer. The second contact system consists of an inner contact layer covering a side of the solar cell areas that face away from the support layer so as to separately discharge excess charge carriers generated by incident light in the absorber layer. The second contact system includes structures that surround and electrically insulate the contacts, which extend through the inner contact layer from the outer contact layer. The first and second contact systems are electrically conductive and connected in series by series contacts in interconnection areas and electrically insulated from each other by an insulation layer outside of the interconnection areas.

Thin-film solar module contacted on one side and having an inner contact layer

A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturize ZnO layers of up to 1 m. The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.

Process and device for cleaning and etching a substrate with a transparent conductive oxide layer

A solar cell includes a photoactive, semiconductive absorber layer configured to generate excess charge carriers of opposed polarity by light incident on a front of the absorber layer during operation. The absorber layer is configured to separate and move, via at least one electric field formed in the absorber layer, the photogenerated excess charge carriers of opposed polarity over a minimal effective diffusion length L. The absorber layer has a thickness Lof 0&#x3c;L&#x2266;L. First contact elements are configured to remove the excess charge carriers of a first polarity on a rear of the absorber layer. Second contact elements are configured remove the excess charge carriers of a second polarity on the rear of the absorber layer. At least one undoped, electrically insulating second passivation region is disposed in an alternating, neighboring arrangement with a first passivation region on the rear of the absorber layer.

Solar cell comprising neighboring electrically insulating passivation regions having high surface charges of opposing polarities and production method

The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.

Method for depositing silicon

The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiHgas streams with values of between 0.01 and 3 sccm/cmare added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280&#xb0; C. and the HF output is between 0.2 and 2 watt/cm. The Hgas streams have values of between 0.3 and 30 sccm/cm, in particular between 0.3 and 10 sccm/cm.

Method of making silicon solar cells containing &#x3bc;C silicon layers

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Berlin, Germany

Bernd Rech