Osram Opto Semiconductors Gmbh

Bernd Mayer

Wolfgang Schmid

Norbert Linder

Rainer Butendeich

Ines Pietzonka

Harald König

Alexander Behres

Christian Lauer

Martin Müller

Andreas Koller

In an embodiment a growth structure for a radiation-emitting semiconductor component includes a semiconductor substrate containing a material based on arsenide compound semiconductors and a buffer structure arranged on the semiconductor substrate, wherein the buffer structure includes a buffer layer having at least one n-doped layer and wherein the n-doped layer contains oxygen, and a molar fraction of oxygen in the n-doped layer is between 10cmand 10cm, inclusive.

Growth structure for a radiation-emitting semiconductor component, and radiation-emitting semiconductor component

The invention relates to a light-emitting diode chip, comprising an n-type semiconductor layer (), a p-type semiconductor layer (), an active region () between the n-type semiconductor layer () and the p-type semiconductor layer (), a lateral surface (), which limits the n-type semiconductor layer (), the p-type semiconductor layer () and the active region () in a lateral direction, and a doped region (), in which a dopant is introduced into a semiconductor material of the light-emitting diode chip, and/or comprising a neutralized region (), wherein the doped region () and/or the neutralized region () are formed at the lateral surface () at least in the region of the active region, and the light-emitting diode chip is intended to emit incoherent electromagnetic radiation during operation.

Light-emitting diode chip and method for producing a light-emitting diode chip

A semiconductor chip () comprises a p-doped region (I) having a cladding layer () and a contact layer () between which a first interlayer () and a second interlayer () are arranged. A concentration of a first material component (B) within the first and the second interlayer () changes in such a way that the band gap varies in a range lying between the band gap of the cladding layer () and the band gap of the contact layer (). A method for producing a semiconductor chip of this type is also disclosed.

Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip

In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

Radiation-emitting semi-conductor component

A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.

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Wuppertal, Germany

Bernd Mayer